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2SD896 Dataheets PDF



Part Number 2SD896
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description NPN Triple Diffused Planar Silicon Transistor
Datasheet 2SD896 Datasheet2SD896 Datasheet (PDF)

Ordering number:ENN678F 2SB776 : PNP Epitaxial Planar Silicon Transistor 2SD896 : NPN Triple Diffused Planar Silicon Transistor 2SB776/2SD896 100V/7A, AF 40W Output Applications Features · Capable of being mounted easily because of onepoint fixing type plastic molded package (Interchangeable with TO-3). · Wide ASO because of on-chip ballast resistance. www.DataSheet4U.com · Goode dependence of fT on current and excellent high frequency responce. The descriptions in parentheses are for the 2SB7.

  2SD896   2SD896


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Ordering number:ENN678F 2SB776 : PNP Epitaxial Planar Silicon Transistor 2SD896 : NPN Triple Diffused Planar Silicon Transistor 2SB776/2SD896 100V/7A, AF 40W Output Applications Features · Capable of being mounted easily because of onepoint fixing type plastic molded package (Interchangeable with TO-3). · Wide ASO because of on-chip ballast resistance. www.DataSheet4U.com · Goode dependence of fT on current and excellent high frequency responce. The descriptions in parentheses are for the 2SB776 only ; other descriptions than those in parentheses are common to the 2SB776 and 2SD896. Package Dimensions unit:mm 2022A [2SB776/2SD896] 3.5 15.6 14.0 2.6 3.2 4.8 2.0 1.6 2.0 20.0 0.6 1.0 1 0.6 2 3 1.3 1.2 15.0 20.0 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25˚C 5.45 5.45 1 : Base 2 : Collector 3 ; Emitter SANYO : TO-3PB Ratings (–)120 (–)100 (–)6 (–)7 (–)11 70 150 –55 to +150 Unit V V V A A W ˚C ˚C Conditions Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Base-to-Emitter Voltage Symbol ICBO IEBO hFE1 hFE2 fT Cob VBE VCB=(–)80V, IE=0 VEB=(–)4V, IC=0 VCE=(–)5V, IC=(–)1A VCE=(–)5V, IC=(–)4A VCE=(–)5V, IC=(–)1A VCB=(–)10V, f=1MHz VCE=(–)5V, IC=(–)1A Rank hFE D 60 to 120 E 100 to 200 60* 20 15 (200) 140 (–)1.5 MHz pF pF V Conditions Ratings min typ max (–)0.1 (–)0.1 200* Unit mA mA * : The 2SB776/2SD896 are classified by 1A hFE as follows : 1.4 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 90503TN (KT)/91098HA (KT)/90595MO (KOT)/4017KI/1115MW, TS 8-341G/7089 No.678–1/4 2SB776/2SD896 Continued from preceding page. Parameter Collector-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Votage Turn-ON TIme Storage Time Fall Time www.DataSheet4U.com Symbol VCE(sat) Conditions IC=(–)4A, IB=(–)0.4A (–)120 (–)100 (–)100 (–)6 (0.2) 0.2 (0.3) 0.6 (1.2) 6.0 Ratings min typ (–0.9) 0.6 max 2.0 Unit V V V V V V µs µs µs µs µs µs V(BR)CBO IC=(–)5mA, IE=0 IC=(–)5mA, RBE=∞ V(BR)CEO IC=(–)50mA, RBE=∞ V(BR)EBO IE=(–)5mA, IC=0 ton tstg tf See specified Test Circuit See specified Test Circuit See specified Test Circuit Switching Time Test Circuit PW=20µs D.C.≤1% INPUT IB1 OUTPUT IB2 VR 200Ω 51Ω + 1µF VBE= --2V + 1µF VCC=20V RB 1Ω RL 20Ω IC=10IB1= --10IB2=1A (For PNP, the polarity is reversed.) --7 IC -- VCE --1 2 0m A --10 A 0m A --80m 2SB776 7 IC -- VCE 1 m 20 A mA 100 2SD896 --6 6 Collector Current, IC – A --5 Collector Current, IC – A A --60m 80mA 5 --40mA --4 60mA 40mA 4 --3 --20mA --10mA 3 20mA 2 --2 10mA 1 --1 0 0 --10 --20 --30 IB=0 --40 0 0 10 20 30 IB=0 40 ITR08368 Collector-to-Emitter Voltage, VCE – V ITR08367 --5 Collector-to-Emitter Voltage, VCE – V 5 IC -- VBE 2SB776 VCE= --5V IC -- VBE 2SD896 VCE=5V Collector Current, IC – A --3 Collector Current, IC – A 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --4 4 3 --2 2 --1 1 0 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Base-to-Emitter Voltage, VBE – V ITR08369 Base-to-Emitter Voltage, VBE – V ITR08370 No.678–2/4 2SB776/2SD896 5 f T -- IC Gain-Bandwidth Product, fT – MHz Gain-Bandwidth Product, fT – MHz 3 2 2SB776 VCE= --5V 5 3 2 f T -- IC 2SD896 VCE=5V 10 7 5 3 2 10 7 5 3 2 1.0 www.DataSheet4U.com --0.1 1000 7 5 2 3 5 7 --1.0 2 3 5 Collector Current, IC – A --10 ITR08371 7 1.0 0.1 2 3 5 7 1.0 2 3 5 Collector Current, IC – A 1000 7 10 ITR08372 hFE -- IC 2SB776 VCE= --5V hFE -- IC 2SD896 VCE=5V 7 5 DC Current Gain, hFE 2 DC Current Gain, hFE 2 3 5 7 --1.0 2 3 5 7 --10 2 ITR08373 3 3 2 100 7 5 3 2 100 7 5 3 2 10 --0.1 10 0.1 2 3 5 7 1.0 2 3 5 7 Collector Current, IC – A 2 Cob -- VCB Collector Current, IC – A 2 2 10 ITR08374 Cob -- VCB 2SB776 f=1MHz 1000 1000 2SD896 f=1.


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