Document
Ordering number:ENN678F
2SB776 : PNP Epitaxial Planar Silicon Transistor 2SD896 : NPN Triple Diffused Planar Silicon Transistor
2SB776/2SD896
100V/7A, AF 40W Output Applications
Features
· Capable of being mounted easily because of onepoint fixing type plastic molded package (Interchangeable with TO-3). · Wide ASO because of on-chip ballast resistance. www.DataSheet4U.com · Goode dependence of fT on current and excellent high frequency responce. The descriptions in parentheses are for the 2SB776 only ; other descriptions than those in parentheses are common to the 2SB776 and 2SD896.
Package Dimensions
unit:mm 2022A
[2SB776/2SD896]
3.5 15.6 14.0 2.6 3.2 4.8 2.0
1.6
2.0 20.0 0.6
1.0 1 0.6 2 3
1.3
1.2 15.0 20.0
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg
Tc=25˚C
5.45
5.45
1 : Base 2 : Collector 3 ; Emitter SANYO : TO-3PB
Ratings (–)120 (–)100 (–)6 (–)7 (–)11 70 150 –55 to +150 Unit V V V A A W
˚C ˚C
Conditions
Electrical Characteristics at Ta = 25˚C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Base-to-Emitter Voltage Symbol ICBO IEBO hFE1 hFE2 fT Cob VBE VCB=(–)80V, IE=0 VEB=(–)4V, IC=0 VCE=(–)5V, IC=(–)1A VCE=(–)5V, IC=(–)4A VCE=(–)5V, IC=(–)1A VCB=(–)10V, f=1MHz VCE=(–)5V, IC=(–)1A Rank hFE D 60 to 120 E 100 to 200 60* 20 15 (200) 140 (–)1.5 MHz pF pF V Conditions Ratings min typ max (–)0.1 (–)0.1 200* Unit mA mA
* : The 2SB776/2SD896 are classified by 1A hFE as follows :
1.4
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
90503TN (KT)/91098HA (KT)/90595MO (KOT)/4017KI/1115MW, TS 8-341G/7089 No.678–1/4
2SB776/2SD896
Continued from preceding page.
Parameter Collector-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Votage Turn-ON TIme Storage Time Fall Time www.DataSheet4U.com Symbol VCE(sat) Conditions IC=(–)4A, IB=(–)0.4A (–)120 (–)100 (–)100 (–)6 (0.2) 0.2 (0.3) 0.6 (1.2) 6.0 Ratings min typ (–0.9) 0.6 max 2.0 Unit V V V V V V µs µs µs µs µs µs
V(BR)CBO IC=(–)5mA, IE=0 IC=(–)5mA, RBE=∞ V(BR)CEO IC=(–)50mA, RBE=∞ V(BR)EBO IE=(–)5mA, IC=0 ton tstg tf See specified Test Circuit See specified Test Circuit See specified Test Circuit
Switching Time Test Circuit
PW=20µs D.C.≤1% INPUT IB1 OUTPUT IB2 VR 200Ω 51Ω + 1µF VBE= --2V + 1µF VCC=20V RB 1Ω
RL 20Ω
IC=10IB1= --10IB2=1A (For PNP, the polarity is reversed.)
--7
IC -- VCE
--1 2 0m A
--10 A 0m A --80m
2SB776
7
IC -- VCE
1 m 20 A mA 100
2SD896
--6
6
Collector Current, IC – A
--5
Collector Current, IC – A
A --60m
80mA
5
--40mA
--4
60mA
40mA
4
--3
--20mA --10mA
3
20mA
2
--2
10mA
1
--1 0 0 --10 --20 --30
IB=0
--40
0 0 10 20 30
IB=0
40 ITR08368
Collector-to-Emitter Voltage, VCE – V ITR08367
--5
Collector-to-Emitter Voltage, VCE – V
5
IC -- VBE
2SB776 VCE= --5V
IC -- VBE
2SD896 VCE=5V
Collector Current, IC – A
--3
Collector Current, IC – A
0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4
--4
4
3
--2
2
--1
1
0
0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Base-to-Emitter Voltage, VBE – V
ITR08369
Base-to-Emitter Voltage, VBE – V
ITR08370
No.678–2/4
2SB776/2SD896
5
f T -- IC
Gain-Bandwidth Product, fT – MHz
Gain-Bandwidth Product, fT – MHz
3 2
2SB776 VCE= --5V
5 3 2
f T -- IC
2SD896 VCE=5V
10 7 5 3 2
10 7 5 3 2
1.0
www.DataSheet4U.com --0.1
1000 7 5
2
3
5
7
--1.0
2
3
5
Collector Current, IC – A
--10 ITR08371
7
1.0 0.1
2
3
5
7
1.0
2
3
5
Collector Current, IC – A
1000
7 10 ITR08372
hFE -- IC
2SB776 VCE= --5V
hFE -- IC
2SD896 VCE=5V
7 5
DC Current Gain, hFE
2
DC Current Gain, hFE
2 3 5 7 --1.0 2 3 5 7 --10 2 ITR08373
3
3 2
100 7 5 3 2
100 7 5 3 2
10 --0.1
10 0.1
2
3
5
7
1.0
2
3
5
7
Collector Current, IC – A
2
Cob -- VCB
Collector Current, IC – A
2
2 10 ITR08374
Cob -- VCB
2SB776 f=1MHz
1000 1000
2SD896 f=1.