2SD968

Transistor 2SD968, 2SD968A Silicon NPN epitaxial planer type For low-frequency driver amplification Complementary to 2SB789 and 2SB789A Unit: mm s Features q q q 4.5±0.1 1.6±0.2 1.5±0.1 1.0–0.2 +0.1 High collector to emitter voltage VCEO. Large collector power dissipation PC. Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. (Ta=25˚C) Ratings 100 120 100 120 5 1 0.5 * 2.6±0.1 0.4max. 45° 0.4±0.08 0.5±0.08 1.5±0.1 3.0±0.15 4.0–0.20 0.4±0.04 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD968 2SD968A 2SD968 VCBO VCEO VEBO ICP IC PC Tj Tstg Symbol Unit V 3 2 1 marking emitter voltage 2SD968A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * V V A A W ˚C ˚C 1:Base 2:Collector 3:Emitter EIAJ:SC–62 Mini Power Type Package 1 150 –55 ~ +150 Marking symbol : W(2SD968) V(2SD968A) Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion s Electrical Characteristics Parameter Collector to emitter voltage 2SD968 2SD968A (Ta=25˚C) Symbol VCEO VEBO hFE1*1 hFE2 VCE(sat) VBE(sat) fT Cob Conditions IC = 100µA, IB = 0 IE = 10µA, IC = 0 VCE = 10V, IC = 150mA*2 VCE = 5V, IC = 500mA*2 IC = 500mA, IB = 50mA*2 IC = 500mA, IB = 50mA*2 VCB = 10V, IE = –50mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz min 100 120 5 90 50 1...