Transistor
2SD973, 2SD973A
Silicon NPN epitaxial planer type
For low-frequency power amplification
Unit: mm
6.9±0.1
0.4...
Transistor
2SD973, 2SD973A
Silicon
NPN epitaxial planer type
For low-frequency power amplification
Unit: mm
6.9±0.1
0.4
2.5±0.1 1.0
1.0 2.4±0.2 2.0±0.2 3.5±0.1
s Features
q q
1.5
1.0±0.1
Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. (Ta=25˚C)
Ratings 30 60 25 50 5 1.5 1 1 150 –55 ~ +150 1cm2 Unit V
1.5 R0.9 R0.9
R
0.
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SD973 2SD973A 2SD973 VCEO VEBO ICP IC PC* Tj Tstg VCBO Symbol
0.85
0.55±0.1
1.25±0.05
0.45±0.05
3
2
1
emitter voltage 2SD973A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
*
V
2.5 2.5
V A A W ˚C ˚C
1:Base 2:Collector 3:Emitter EIAJ:SC–71 M Type Mold Package
Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion
or more, and the board
s Electrical Characteristics
Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage 2SD973 2SD973A 2SD973 2SD973A
(Ta=25˚C)
Symbol ICBO VCBO VCEO VEBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob
*1
Conditions VCB = 20V, IE = 0 IC = 10µA, IE = 0 IC = 2mA, IB = 0 IE = 10µA, IC = 0 VCE = 10V, IC = 500mA*2 VCE = 5V, IC = 1A*2 IC = 500mA, IB = 50mA*2 IC = 500mA, IB = 50mA*2 VCB = 10V, IE = –50mA, f = 200MHz VCB = 10V, IE = 0. f = 1MHz
min
typ
max 0.1
30 60 25 50 5 8...