2SD973A

Transistor 2SD973, 2SD973A Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm 6.9±0.1 0.4 2.5±0.1 1.0 1.0 2.4±0.2 2.0±0.2 3.5±0.1 s Features q q 1.5 1.0±0.1 Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. (Ta=25˚C) Ratings 30 60 25 50 5 1.5 1 1 150 –55 ~ +150 1cm2 Unit V 1.5 R0.9 R0.9 R 0. s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD973 2SD973A 2SD973 VCEO VEBO ICP IC PC* Tj Tstg VCBO Symbol 0.85 0.55±0.1 1.25±0.05 0.45±0.05 3 2 1 emitter voltage 2SD973A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * V 2.5 2.5 V A A W ˚C ˚C 1:Base 2:Collector 3:Emitter EIAJ:SC–71 M Type Mold Package Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion or more, and the board s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage 2SD973 2SD973A 2SD973 2SD973A (Ta=25˚C) Symbol ICBO VCBO VCEO VEBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob *1 Conditions VCB = 20V, IE = 0 IC = 10µA, IE = 0 IC = 2mA, IB = 0 IE = 10µA, IC = 0 VCE = 10V, IC = 500mA*2 VCE = 5V, IC = 1A*2 IC = 500mA, IB = 50mA*2 IC = 500mA, IB = 50mA*2 VCB = 10V, IE = –50mA, f = 200MHz VCB = 10V, IE = 0. f = 1MHz min typ max 0.1 30 60 25 50 5 8...