2SD975

2SD975 Silicon NPN Epitaxial Application Power switching / TV horizontal deflection output Outline TO-126 MOD 1 1. Emitter 2. Collector 3. Base 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector surge current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC I C(peak) I C(surge) PC Tj Tstg Ratings 150 60 5 2 2.5 5 1.0 150 –55 to +150 Unit V V V A A A W °C °C 2SD975 Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 150 60 5 — 150 — — — Typ — — — — — — — — Max — — — 1.0 — 0.5 1.3 0.6 V V µs I C = 1.5 A, IB1 = –IB2 = 50 mA Unit V V V µA Test conditions I C = 1 mA, IE = 0 I C = 10 mA, RBE = ∞ I E = 1 mA, IC = 0 VCB = 100 V, IE = 0 VCE = 5 V, IC = 1.5 A*1 I C = 1.5 A, IB = 0.05 A*1 Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Fall time Note: 1. Pulse test. V(BR)EBO I CBO hFE VCE(sat) VBE(sat) tf Maximum Collector Dissipation Curve 1.2 Collector power dissipation PC (W) 6 Area of Safe Operation (20 V, 5 A) Collector current IC (A) 5 4 ure pict For arcing tube 0.8 TC = 25°C f = 15.75 kHz 3 2 1 0.4 (60 V, 0.5 A) 0 50 100 Ambient temperature Ta (°C) 150 0 50 100 150 Collector to emitter vo...