2SH15

ADE–208–288 (Z) 2SH15 Silicon N-Channel IGBT 1st. Edition Feb. 1995 Application High speed power switching TO–3P Features High speed switching Low on saturation voltage 1 2 3 1 2 3 1. Gate 2. Collector 3. Emitter Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Collector peak current Collector dissipation Channel temperature Storage temperature Symbol VCES Ratings 600 ±20 50 100 150 150 –55 to +150 Unit V V A A W °C °C ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ic(peak) PC* Tj IC VGES ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— Tstg ——————————————————————————————————————————— * Value at Tc = 25°C 1 2SH15 Table 2 Electrical Characteristics (Ta = 25°C) Item Collector to emitter breakdown voltage Zero gate voltage collector current Gate to emitter leak current Gate to emitter cutoff current Collector to emitter saturation voltage Collector to emitter saturation voltage1 Input capacitance Symbol V(BR)CES ICES IGES Min 600 Typ — Max — Unit Test conditions V IC = 100 µA, VGE = 0 VCE = 600 V, VGE = 0 VGE = ±20 V, VCE = 0 ——————————————————————————————————————————— ——————————————————————————————————————————— — — 0.5 mA ——————————————————————————————————————————— — 3.0 — — — 2.0...