Document
ADE–208–289 (Z)
2SH16 Silicon N-Channel IGBT
1st. Edition Nov. 1994 Application
High speed power switching
TO–3PL
Features
2
• High speed switching • Low on saturation voltage
1
3
1
2
1. Gate 2. Collector 3. Emitter 3
Table 1 Absolute Maximum Ratings (Ta = 25°C)
Item Collector to emitter voltage Gate to emitter voltage Collector current Collector peak current Collector dissipation Channel temperature Storage temperature Symbol VCES Ratings 600 ±20 75 150 200 150 –55 to +150 Unit V V A A W °C °C
——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ———————————————————————————————————————————
ic(peak) PC* Tj IC VGES
——————————————————————————————————————————— ——————————————————————————————————————————— ———————————————————————————————————————————
Tstg
——————————————————————————————————————————— * Value at Tc = 25°C
1
2SH16
Table 2 Electrical Characteristics (Ta = 25°C)
Item Collector to emitter breakdown voltage Zero gate voltage collector current Gate to emitter leak current Gate to emitter cutoff current Collector to emitter saturation voltage Collector to emitter saturation voltage Input capacitance Symbol V(BR)CES ICES IGES Min 600 Typ — Max — Unit Test conditions V IC = 100 µA, VGE = 0 VCE = 600 V, VGE = 0 VGE = ±20 V, VCE = 0
——————————————————————————————————————————— ———————————————————————————————————————————
— — 0.5 mA
———————————————————————————————————————————
— 3.0 — — — 2.0 ±1 5.0 — µA V V
——————————————————————————————————————————— ———————————————————————————————————————————
VCE(sat)1 VCE(sat)2 Cies IC = 35 A, VGE = 15 V IC = 75 A, VGE = 15 V VCE = 10 V, VGE = 0, f = 1 MHz IC = 75 A, RL = 4 Ω, VGE = ±15 V Rg = 50 Ω VGE(off) IC = 1 mA, VCE = 10 V
———————————————————————————————————————————
— 2.6 3.3** V
———————————————————————————————————————————
— 6200 — pF
———————————————————————————————————————————
Switching time
————————————————
ton tf — — — 900 300 800 — 600 1600
tr
—
700
—
ns
———————————————— ————————————————
toff
———————————————————————————————————————————
**VCE(sat)2 is specified at the correlated test condition (IC=50A)
2
2SH16
Power vs. Temperature Derating 300 Pc (W) 100 I C (A)
Maximum Safe Operation Area 1 m 100 PW s µs =
10 DC (1ms (T Op sh c= e ot) r 25 atio °C n )
Collector Dissipation
200
10
Collector Current
1
100
0.1 Ta = 25 °C
0.01 0 50 100 Case Temperature 150 Tc (°C) 200 1 10 100 1000 Collector to Emitter Voltage V CE (V)
Reverse Bias SOA 100 I C (A)
200 I C (A)
Typical Output Characteristics Pulse Test Ta = 25 °C V GE = 15 V 12 V
160
Collector Current
10
120 80
Collector Current
10 V
1
40
8V
Tc = 25 °C 0.1 0 200 400 600 800 Collector to Emitter Voltage V CE (V) 0
6V 2 4 6 8 10 Collector to Emitter Voltage V CE (V)
3
2SH16
Typical Transfer Characteristics Collector to Emitter Saturation Voltage V CE(sat) (V) 200 I C (A) 10
Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage
160 25 °C Tc = –25 °C 75 °C
8
I C = 75 A 50 A 25 A
Collector Current
120
6
80
4
40 Pulse Test V CE = 10 V 0 4 8 12 Gate to Emitter Voltage 16 20 V GE (V)
2 Pulse Test 0 4 8 12 Gate to Emitter Voltage 16 20 V GE (V)
Collector to Emitter Saturation Voltage vs. Collector Current Collector to Emitter Saturation Voltage V CE(sat) (V) 50 20 10 5 2 1 5 10 20 50 100 200 Collector Current I C (A) Tc =75 °C 25 °C Pulse Test VGE = 15 V 10000 C (pF)
Typical Capacitance vs. Collector to Emitter Voltage Cies
1000 Capacitance Coes
–25 °C
100 V GE = 0 f = 1 MHz
Cres
0.5 2
0 10 20 30 40 50 Collector to Emitter Voltage V CE (V)
4
2SH16
Dynamic Input Characteristics Collector to Emitter Voltage VCE (V) 500 VCC = 400 V 300 V 200 V
20 Gate to Emitter Voltage VGE (V)
Switching Characteristics 1000 500 t (ns) tf 200 td(on) 100 50 20 10 1 V CC = 300 V V GE = ±15 V Rg = 50 Ω Tc = 25 °C 5 10 Collector Current 50 I C (A) 100 tr td(off)
400
16
V GE
200 VCC = 400 V 300 V 200 V V CE 0 80 160 240 320 Gate Charge Qg (nc)
8
100
I C = 75 A
4
0 400
Switching Characteristics 5000 I C = 75 A R L = 4 Ω (V CC = 300 V) 2000 V GE = ±15 V Tc = 25 °C 1000 tr 500 tf 200 100 50 5 10 50 100 Gate Resistance Rg ( Ω) 500
td(off)
Switching Time
300
12
Switching Characteristics 5000
t (ns)
t (ns)
2000 1000 500 tr td(off) tf 200 100 50 –25 I C = 75 A RL = 4 Ω V GE = ±15 V Rg = 50 Ω td(on)
Switching Time
td(on)
Switching Time
0 25 50 75 100 Case Temperature Tc (°C)
125
5
2SH16
Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance γ s (t)
1
D=1 0.5
0.3 0.2 0.1 0.1
0.05
0.02
θ j – c(t) = γ s (t) • θ j – c θ j – c = 0.625 °C/W, Tc = 25 °C
PDM
D=
PW T
0.03
0.01
1
tp sho
uls
e
PW T
0.01 10 µ
100 µ
1m
10 m Pulse Width
100 m PW (S)
1
10
Switching Time Test Circuit
Waveforms 90% 0 10%
Ic Monitor
Vin V CE
Vin Monitor
VCE Monitor
Rg Vin ± 15 V
RL 90% V CC Ic td(on) ton 10% tr td(off) toff 10% tf 90%
D.U.