2SH26

2SH26 Silicon N Channel IGBT High Speed Power Switching ADE-208-788A(Z) 2nd. Edition May 1999 Features High speed switching Low on-voltage Outline TO–220AB C G 1 E 2 3 1. Gate 2. Collector (Flange) 3. Emitter 2SH26 Absolute Maximum Ratings (Ta = 25°C) Item Collector to Emitter voltage Gate to Emitter voltage Collector current Collector peak current Collector dissipation Channel temperature Storage temperature Note: 1. Value at Tc = 25°C Symbol VCES VGES IC ic(peak) PC Tj Tstg Note1 Ratings 600 ±20 10 20 50 150 –55 to +150 Unit V V A A W °C °C Electrical Characteristics (Ta = 25°C) Item Zero gate voltage collector current Gate to emitter leak current Symbol I CES I GES Min — — 6.0 — — — — — — Typ — — — 2.1 620 140 215 300 380 Max 100 ±1 8.0 2.6 — — — 600 760 Unit µA µA V V pF ns ns ns ns Test Conditions VCE = 600V, VGE = 0 VGE = ± 20 V, VCE = 0 I C = 10mA, VCE = 10V I C = 10A, VGE = 15V VCE = 10V, VGE = 0 f = 1MHz I C = 10A RL = 30 Ω VGS = ±15V Rg = 50 Ω Gate to emitter cutoff voltage VGE(off) Collector to emitter saturation VCE(sat) voltage Input capacitance Switching time Cies tr t on tf t off 2 2SH26 Main Characteristics Power vs. Temperature Derating 80 Pch (W) I C (A) 100 30 10 3 1 DC Maximum Safe Operation Area 60 0 10 µs 1 Channel Dissipation Collector Current s m 40 ) ot sh (1 °C) s m = 25 10 (Tc = on PW rati e O 0.3 0.1 0.03 Ta = 25 °C 1 p 20 0 0.01 50 100 150 200 Case Temperature Tc (°C) 3 10 30 100 300 1000 Collector to Emitter Voltag...