TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
2SJ148
High Speed Switching Applications Analog Switch Applic...
TOSHIBA Field Effect
Transistor Silicon P Channel MOS Type
2SJ148
High Speed Switching Applications Analog Switch Applications Interface Applications
2SJ148
Unit: mm
Excellent switching time: ton = 14 ns (typ.) High forward transfer admittance: |Yfs| = 100 mS (min) Low on resistance: RDS (ON) = 1.3 Ω (typ.) Enhancement-mode
Complementary to 2SK982
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS −60 V
Gate-source voltage
VGSS ±20 V
Drain current
DC Pulse
ID
−200
mA
IDP −800
JEDEC
TO-92
Drain power dissipation (Ta = 25°C)
PD
400 mW
JEITA
SC-43
Channel temperature
Tch
150 °C
TOSHIBA
2-5F1H
Storage temperature range
Tstg
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of
Weight: 0.21 g (typ.)
high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1 2007-11-01
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current Drain cut-off current Drain-source breakdown volta...