2SJ160

2SJ160, 2SJ161, 2SJ162 Silicon P-Channel MOS FET Application Low frequency power amplifier Complementary pair with 2SK1056, 2SK1057 and 2SK1058 Features Good frequency characteristic High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics Equipped with gate protection diodes Suitable for audio power amplifier 2SJ160, 2SJ161, 2SJ162 Outline TO-3P D G 1 2 3 1. Gate 2. Source (Flange) 3. Drain S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SJ160 2SJ161 2SJ162 Gate to source voltage Drain current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1. Value at TC = 25°C VGSS ID I DR Pch* Tch Tstg 1 Symbol VDSX Ratings –120 –140 –160 ±15 –7 –7 100 150 –55 to +150 Unit V V A A W °C °C 2 2SJ160, 2SJ161, 2SJ162 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage 2SJ160 2SJ161 2SJ162 Gate to source breakdown voltage Gate to source cutoff voltage Drain to source saturation voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Turn-off time Note: 1. Pulse test V(BR)GSS VGS(off) VDS(sat) |yfs| Ciss Coss Crss t on t off Symbol Min V(BR)DSX –120 –140 –160 ±15 –0.15 — 0.7 — — — — — Typ — — — — — — 1.0 900 400 40 230 110 Max — — — — –1.45 –12 1.4 — — — — — Unit V V V V V V S pF pF pF ns ns VDD = –20 V, ID = –4 A I G = ±100 µA, VDS = 0 I D = –100 mA, VDS = –10 ...