2SJ163

Silicon Junction FETs (Small Signal) 2SJ163 Silicon P-Channel Junction FET For general switching Complementary to 2SK1103 0.65±0.15 +0.2 unit: mm 0.65±0.15 2.8 –0.3 1.5 –0.05 +0.25 s Features 2.9 –0.05 1.9±0.2 +0.2 q Low ON-resistance q Low-noise characteristics 0.95 1 0.95 3 0.4 –0.05 +0.1 s Absolute Maximum Ratings (Ta = 25°C) Parameter Gate to Drain voltage Drain current Gate current Allowable power dissipation Channel temperature Storage temperature Symbol VGDS ID IG PD Tch Tstg Ratings 65 −20 −10 150 150 −55 to +150 Unit 0.8 2 1.45 V mA mA mW °C °C +0.2 1.1 –0.1 1: Source 2: Drain 3: Gate JEDEC: TO-236 EIAJ: SC-59 Mini Type Package (3-pin) Marking Symbol (Example): 4M s Electrical Characteristics (Ta = 25°C) Parameter Drain to Source cut-off current Gate to Source leakage current Gate to Drain voltage Gate to Source cut-off voltage Forward transfer admittance Drain to Source ON-resistance Symbol IDSS* IGSS VGDS VGSC | Yfs | RDS(on) Conditions VDS = −10V, VGS = 0 VGS = 30V, VDS = 0 IG = 10µA, VDS = 0 VDS = −10V, ID = −10µA VDS = −10V, ID = −1mA, f = 1kHz VDS = −10mV, VGS = 0 VDS = −10V, VGS = 0, f = 1MHz 1.8 65 1.5 2.5 300 12 4 3.5 min − 0.2 typ max −6 10 Unit mA nA V V mS Ω pF pF Input capacitance (Common Source) Ciss Reverse transfer capacitance (Common Source) Crss * IDSS rank classification Runk IDSS (mA) O − 0.2 to −1 4MO P − 0.6 to −1.5 4MP Q −1 to −3 4MQ R −2.5 to −6 4MR Marking Symbol 0 to 0.1 0.1 to 0.3 0.4±0.2 0.16 –0.06 +0.1 1 Silic...