2SJ172

2SJ172 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-220AB D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SJ172 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings –60 ±20 –10 –40 –10 40 150 –55 to +150 Unit V V A A A W °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS V(BR)GSS I GSS –60 ±20 — — –1.0 — — |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 4.0 — — — — — — — — — Typ — — — — — 0.13 0.18 6.5 900 460 130 8 65 170 105 –1.1 200 Max — — ±10 250 –2.0 0.18 0.25 — — — — — — — — — — S pF pF pF ns ns ns ns V ns I F = –10 A, VGS = 0 I F = –10 A, VGS = 0, diF/dt = 50 A/µs I D = –5 A, VGS = –10 V, RL = 6 Ω Unit V V µA µA V Ω Test conditions I D = –10 mA, VGS = 0 I G = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = –50 V, VGS = 0 I D = –1 mA, VDS = –10 V I D = –5 A, VGS = –10 V*1 I D = –5 A, VGS = –4 V*1 I D = –5 A, V...