2SJ175

2SJ175 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-220FM D G 1 2 3 1. Gate 2. Drain 3. Source S 2SJ175 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Symbol VDSS VGSS ID ID(pulse)* IDR Pch* Tch Tstg 2 1 Ratings –60 ±20 –10 –40 –10 25 150 –55 to +150 Unit V V A A A W °C °C 2 2SJ175 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS V(BR)GSS IGSS VGS(off) RDS(on) –60 ±20 — — –1.0 — — Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1. Pulse test |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr 4.0 — — — — — — — — — Typ — — — — — 0.13 0.18 6.5 900 460 130 8 65 170 105 –1.1 200 Max — — ±10 –250 –2.0 0.18 0.25 — — — — — — — — — — S pF pF pF ns ns ns ns V ns IF = –10 A, VGS = 0 IF = –10 A, VGS = 0, di...