2SJ186

2SJ186 Silicon P-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline UPAK 2 1 4 3 D G 1. Gate 2. Drain 3. Source 4. Drain S 2SJ186 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings –200 ±15 –0.5 –1.0 –0.5 1 150 –55 to +150 Unit V V A A A W °C °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. When using the alumina ceramic board (12.5×20×0.7 mm) 2 2SJ186 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS V(BR)GSS I GSS –200 ±15 — — –2.0 — — |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 0.18 — — — — — — — — — Typ — — — — — 8.0 10.0 0.3 75 32 5 6 6 17 15 0.95 100 Max — — ±10 –50 –4.0 12.0 15.0 — — — — — — — — — — S pF pF pF ns ns ns ns V ns I F = –0.5 A, VGS = 0 I F = –0.5 A, VGS = 0, diF/dt = 50 A/µs I D = –0.25 A, VGS = –10 V, RL = 120 Ω Unit V V µA µA V Ω Test conditions I D = –10 mA, VGS = 0 I G = ±100 µA, VDS = 0 VGS = ±12 V, VDS = 0 VDS = –160 V, VGS = 0 I D = –1 mA, VDS = –10 V I D = –0.25 A, VGS = –10 V*1 I D = –1 A, VGS = –10 V*1 I D = –0.25 A, VDS = –10 V*1 VDS...