2SJ193

Ordering number:EN3766 Features · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. P-Channel Silicon MOSFET 2SJ193 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2062A [2SJ193] 4.5 1.6 1.5 1.0 2.5 4.25max 0.4 0.5 32 1.5 1 3.0 0.75 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Tch Tstg Conditions PW≤10µs, duty cycle≤1% Tc=25˚C Mounted on ceramic board (250mm2× 0.8mm) Electrical Characteristics at Ta = 25˚C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source ON-State Resistance Symbol Conditions V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on) RDS(on) ID=–1mA, VGS=0 VDS=–100V, VGS=0 VGS=±12V, VDS=0 VDS=–10V, ID=–1mA VDS=–10V, ID=–500mA ID=–500mA, VGS=–10V ID=–500mA, VGS=–4V 0.4 1 : Gate 2 : Drain 3 : Source SANYO : PCP Ratings –100 ±15 –1 –4 3.5 1.5 150 –55 to +150 Unit V V A A W W ˚C ˚C Ratings min typ max Unit –100 V –100 µA ±10 µA –1.0 –2.0 V 0.6 1.0 S 1.8 2.4 Ω 2.4 3.5 Ω Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, ...