2SJ204

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ204 P-CHANNEL MOSFET FOR SWITCHING The 2SJ204, P-channel vertical type MOSFET, is a switching device which can be driven directly by the output of ICs having a 5 V power source. The 2SJ204 has low on-state resistance and excellent switching characteristics, it is suitable for driving actuators such as motors, relays, and solenoids. FEATURES Directly driven by ICs having a 5 V power supply. Has low on-state resistance RDS(on) = 13 Ω MAX. (VGS = −4.0 V, ID = −10 mA) RDS(on) = 8 Ω MAX. (VGS = −10 V, ID = −10 mA) Complementary to 2SK1582 ORDERING INFORMATION PART NUMBER 2SJ204 Marking: H15 PACKAGE SC-59 (Mini Mold) 1.1 to 1.4 0.3 2.9 ±0.2 0.95 0.95 0 to 0.1 PACKAGE DRAWING (Unit: mm) +0.1 –0.05 2.8 ±0.2 1.5 0.65 +0.1 –0.15 0.4 +0.1 –0.05 2 3 1 Marking 0.4 +0.1 –0.06 0.16 1. Source 2. Gate 3. Drain ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS −30 Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) Note Total Power Dissipation VGSS ID(DC) ID(pulse) PT m20 m200 m400 200 Channel Temperature Tch 150 Storage Temperature Tstg −55 to +150 V V mA mA mW °C °C Note PW ≤ 10 ms, Duty Cycle ≤ 50% EQUIVALENT CIRCUIT Drain Gate Body Diode Gate Protection Diode Source Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is exte...