2SJ204 MOSFET Datasheet

2SJ204 Datasheet, PDF, Equivalent


Part Number

2SJ204

Description

P-CHANNEL MOSFET

Manufacture

NEC

Total Page 5 Pages
Datasheet
Download 2SJ204 Datasheet


2SJ204
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ204
P-CHANNEL MOSFET
FOR SWITCHING
The 2SJ204, P-channel vertical type MOSFET, is a switching
device which can be driven directly by the output of ICs having a
5 V power source.
The 2SJ204 has low on-state resistance and excellent switching
characteristics, it is suitable for driving actuators such as motors,
relays, and solenoids.
FEATURES
Directly driven by ICs having a 5 V power supply.
Has low on-state resistance
RDS(on) = 13 MAX. (VGS = 4.0 V, ID = 10 mA)
RDS(on) = 8 MAX. (VGS = 10 V, ID = 10 mA)
Complementary to 2SK1582
<R>
ORDERING INFORMATION
PART NUMBER
2SJ204
Marking: H15
PACKAGE
SC-59 (Mini Mold)
PACKAGE DRAWING (Unit: mm)
2.8 ±0.2
1.5
0.65
+0.1
–0.15
2
3
1
Marking
1. Source
2. Gate
3. Drain
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
30
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC)
Drain Current (pulse) Note
Total Power Dissipation
VGSS
ID(DC)
ID(pulse)
PT
m20
m200
m400
200
Channel Temperature
Tch 150
Storage Temperature
Tstg 55 to +150
V
V
mA
mA
mW
°C
°C
Note PW 10 ms, Duty Cycle 50%
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
<R> Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D17904EJ3V0DS00 (3rd edition)
(Previous No. TC-2326)
Date Published February 2006 NS CP(K)
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
1991

2SJ204
<R>
<R>
<R>
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
IDSS VDS = 30 V, VGS = 0 V
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance Note
Drain to Source On-state Resistance Note
IGSS
VGS(off)
| yfs |
RDS(on)1
VGS = m20 V, VDS = 0 V
VDS = 5.0 V, ID = 1.0 µA
VDS = 5.0 V, ID = 10 mA
VGS = 4.0 V, ID = 10 mA
RDS(on)2 VGS = 10 V, ID = 10 mA
Input Capacitance
Ciss VDS = 5.0 V
Output Capacitance
Coss
VGS = 0 V
Reverse Transfer Capacitance
Crss f = 1 MHz
Turn-on Delay Time
td(on)
VGS = 4.0 V, RG = 10
Rise Time
tr VDD = 5.0 V
Turn-off Delay Time
td(off)
ID = 10 mA
Fall Time
tf
Note Pulsed
TEST CIRCUIT SWITCHING TIME
D.U.T.
RG
PG.
VGS()
0
τ
τ = 1 µs
Duty Cycle 1%
RL
VDD
VGS()
VGS
Wave Form
10%
0
VGS 90%
ID()
90%
ID
Wave Form
0 10%
td(on)
ID
tr td(off)
90%
10%
tf
ton toff
2SJ204
MIN. TYP. MAX. UNIT
1.0 µA
m1.0
1.4 1.9 2.4
µA
V
20 mS
8.5 13
5 8
27 pF
27 pF
6 pF
120 ns
240 ns
135 ns
210 ns
2 Data Sheet D17904EJ3V0DS


Features DATA SHEET MOS FIELD EFFECT TRANSISTOR 2 SJ204 P-CHANNEL MOSFET FOR SWITCHING T he 2SJ204, P-channel vertical type MOSF ET, is a switching device which can be driven directly by the output of ICs ha ving a 5 V power source. The 2SJ204 has low on-state resistance and excellent switching characteristics, it is suitab le for driving actuators such as motors , relays, and solenoids. FEATURES • Directly driven by ICs having a 5 V pow er supply. • Has low on-state resista nce RDS(on) = 13 Ω MAX. (VGS = −4.0 V, ID = −10 mA) RDS(on) = 8 Ω MAX. (VGS = −10 V, ID = −10 mA) • Com plementary to 2SK1582 ORDERING IN FORMATION PART NUMBER 2SJ204 Marking: H 15 PACKAGE SC-59 (Mini Mold) 1.1 to 1 .4 0.3 2.9 ±0.2 0.95 0.95 0 to 0.1 PACKAGE DRAWING (Unit: mm) +0.1 –0.0 5 2.8 ±0.2 1.5 0.65 +0.1 –0.15 0 .4 +0.1 –0.05 2 3 1 Marking 0.4 + 0.1 –0.06 0.16 1. Source 2. Gate 3. Drain ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS −30 Gate to Source Voltage (VDS = 0 V) D.
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