2SJ204 MOSFET Datasheet
|Total Page||5 Pages|
MOS FIELD EFFECT TRANSISTOR
The 2SJ204, P-channel vertical type MOSFET, is a switching
device which can be driven directly by the output of ICs having a
5 V power source.
The 2SJ204 has low on-state resistance and excellent switching
characteristics, it is suitable for driving actuators such as motors,
relays, and solenoids.
• Directly driven by ICs having a 5 V power supply.
• Has low on-state resistance
RDS(on) = 13 Ω MAX. (VGS = −4.0 V, ID = −10 mA)
RDS(on) = 8 Ω MAX. (VGS = −10 V, ID = −10 mA)
• Complementary to 2SK1582
SC-59 (Mini Mold)
PACKAGE DRAWING (Unit: mm)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC)
Drain Current (pulse) Note
Total Power Dissipation
Tstg −55 to +150
Note PW ≤ 10 ms, Duty Cycle ≤ 50%
<R> Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D17904EJ3V0DS00 (3rd edition)
(Previous No. TC-2326)
Date Published February 2006 NS CP(K)
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Zero Gate Voltage Drain Current
IDSS VDS = −30 V, VGS = 0 V
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance Note
Drain to Source On-state Resistance Note
| yfs |
VGS = m20 V, VDS = 0 V
VDS = −5.0 V, ID = −1.0 µA
VDS = −5.0 V, ID = −10 mA
VGS = −4.0 V, ID = −10 mA
RDS(on)2 VGS = −10 V, ID = −10 mA
Ciss VDS = −5.0 V
VGS = 0 V
Reverse Transfer Capacitance
Crss f = 1 MHz
Turn-on Delay Time
VGS = −4.0 V, RG = 10 Ω
tr VDD = −5.0 V
Turn-off Delay Time
ID = −10 mA
TEST CIRCUIT SWITCHING TIME
τ = 1 µs
Duty Cycle ≤ 1%
MIN. TYP. MAX. UNIT
−1.4 −1.9 −2.4
2 Data Sheet D17904EJ3V0DS
MOS FIELD EFFECT TRANSISTOR
P-CHANNEL MOSFET FOR SWITCHING
T he 2SJ204, P-channel vertical type MOSF ET, is a switching device which can be driven directly by the output of ICs ha ving a 5 V power source.
The 2SJ204 has low on-state resistance and excellent switching characteristics, it is suitab le for driving actuators such as motors , relays, and solenoids.
• Directly driven by ICs having a 5 V pow er supply. • Has low on-state resista nce
RDS(on) = 13 Ω MAX. (VGS = −4.0 V, ID = −10 mA) RDS(on) = 8 Ω MAX. (VGS = −10 V, ID = −10 mA) • Com plementary to 2SK1582
|Keywords||2SJ204, datasheet, pdf, NEC, P-CHANNEL, MOSFET, SJ204, J204, 204, 2SJ20, 2SJ2, 2SJ, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute|