2SJ207 FET Datasheet

2SJ207 Datasheet, PDF, Equivalent


Part Number

2SJ207

Description

P-CHANNEL MOS FET

Manufacture

NEC

Total Page 5 Pages
Datasheet
Download 2SJ207 Datasheet


2SJ207
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ207
P-CHANNEL MOS FET
FOR SWITCHING
DESCRIPTION
The 2SJ207, P-channel vertical type MOS FET, is a switching device
which can be driven by 2.5 V power supply.
As the MOS FET is driven by low voltage and does not require
consideration of driving current, it is suitable for appliances including
VCR cameras and headphone stereos which need power saving.
FEATURES
• Directly driven by ICs having a 3 V power supply.
• Not necessary to consider driving current because of its
high input impedance.
• Possible to reduce the number of parts by omitting the bias
resistor.
• Has low on-state resistance
RDS(on) = 4.0 Ω MAX. VGS = 2.5 V, ID = 30 mA
RDS(on) = 1.5 Ω MAX. VGS = 4.0 V, ID = 500 mA
<R> ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC)
Drain Current (pulse) Note 1
Total Power Dissipation Note 2
Channel Temperature
Storage Temperature
VDSS
VGSS
ID(DC)
ID(pulse)
PT
Tch
Tstg
16
m16
m1.0
m2.0
2.0
150
55 to +150
V
V
A
A
W
°C
°C
Notes 1. PW 10 ms, Duty Cycle 50%
2. When using ceramic board of 16 cm2 × 0.7 mm
PACKAGE DRAWING (Unit: mm)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18278EJ4V0DS00 (4th edition)
(Previous No. TC-2329A)
Date Published July 2006 NS CP(K)
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
1991, 2006

2SJ207
2SJ207
<R>
2
Data Sheet D18278EJ4V0DS


Features DATA SHEET MOS FIELD EFFECT TRANSISTOR 2 SJ207 P-CHANNEL MOS FET FOR SWITCHING DESCRIPTION The 2SJ207, P-channel vert ical type MOS FET, is a switching devic e which can be driven by 2.5 V power su pply. As the MOS FET is driven by low v oltage and does not require considerati on of driving current, it is suitable f or appliances including VCR cameras and headphone stereos which need power sav ing. FEATURES • Directly driven by I Cs having a 3 V power supply. • Not n ecessary to consider driving current be cause of its high input impedance. • Possible to reduce the number of parts by omitting the bias resistor. • Has low on-state resistance RDS(on) = 4.0 MAX. VGS = -2.5 V, ID = -30 mA RD S(on) = 1.5 Ω MAX. VGS = -4.0 V, ID = -500 mA ABSOLUTE MAXIMUM RATIN GS (TA = 25°C) Drain to Source Voltag e (VGS = 0 V) Gate to Source Voltage (V DS = 0 V) Drain Current (DC) Drain Curr ent (pulse) Note 1 Total Power Dissipat ion Note 2 Channel Temperature Storage Temperature VDSS VGSS ID(DC) ID(pulse) PT .
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