2SJ208

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ208 P-CHANNEL MOS FET FOR SWITCHING DESCRIPTION The 2SJ208, P-channel vertical type MOS FET, is a switching device which can be driven by 2.5 V power supply. As the MOS FET is driven by low voltage and does not require consideration of driving current, it is suitable for appliances including VCR cameras and headphone stereos which need power saving. FEATURES Directly driven by ICs having a 3 V power supply. Not necessary to consider driving current because of its high input impedance. Possible to reduce the number of parts by omitting the bias resistor. Has low on-state resistance RDS(on) = 3.0 Ω MAX. VGS = －2.5 V, ID = －30 mA RDS(on) = 1.0 Ω MAX. VGS = －4.0 V, ID = －1.0 A ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) Note 1 Total Power Dissipation Note 2 Channel Temperature Storage Temperature VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg −16 m16 m2.0 m4.0 2.0 150 −55 to +150 V V A A W °C °C Notes 1. PW ≤ 10 ms, Duty Cycle ≤ 50% 2. When using ceramic board of 16 cm2 × 0.7 mm PACKAGE DRAWING (Unit: mm) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document ...