P-Channel MOSFET
Ordering number:EN4316
P-Channel Silicon MOSFET
2SJ306
Ultrahigh-Speed Switching Applications
Features
· Low ON resist...
Description
Ordering number:EN4316
P-Channel Silicon MOSFET
2SJ306
Ultrahigh-Speed Switching Applications
Features
· Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting.
Package Dimensions
unit:mm 2063A
[2SJ306]
10.0 3.2
4.5 2.8
3.5 7.2 16.0
18.1 5.6
1.6 1.2
0.75 123 2.55 2.55
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse)
Symbol
VDSS VGSS
ID IDP
Allowable Power Dissipation
PD
Channel Temperature Storage Temperature
Tch Tstg
Conditions
PW≤10µs, duty cycle≤1% Tc=25˚C
2.55
2.55
2.4 14.0
2.4
0.7
1 : Gate 2 : Drain 3 : Source SANYO :TO-220ML
Ratings –250 ±30 –3 –12 2.0 25 150
–55 to +150
Unit V V A A W W ˚C ˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage Gate-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source ON-State Resistance
V(BR)DSS V(BR)GSS
IDSS IGSS VGS(off) | yfs |
RDS(on)
ID=–1mA, VGS=0 IG=±100µA, VDS=0 VDS=–250V, VGS=0 VGS=±25V, VDS=0 VDS=–10V, ID=–1mA VDS=–10V, ID=–1.5A ID=–1.5A, VGS=–10V
Ratings min typ max
Unit
–250
V
±30 V
–100 µA
±10 µA
–1.5 –2.5 V
1.5 2.5
S
1.5 2.0 Ω Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require ex...
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