2SJ313

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ313 Audio Frequency Power Amplifier Application z High breakdown voltage: VDSS = −180 V z High forward transfer admittance: |Yfs| = 0.7 S (typ.) z Complementary to 2SK2013 2SJ313 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage Gate−source voltage Drain current (Note 1) Power dissipation (Tc = 25°C) Channel temperature Storage temperature range VDSS VGSS ID PD Tch Tstg −180 ±20 −1 25 150 −55~150 V V A W °C °C JEDEC ― JEITA SC-67 TOSHIBA 2-10R1B Weight: 1.9 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2009-09-29 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Gate leakage current Drain−source breakdown voltage Gate−source cut−off voltage (Note 2) Drain−source saturation voltage Forward transfer admittance Input capacitance Output capacitance Reverse tran...