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2SJ337

Sanyo Semicon Device

P-Channel MOSFET

Ordering number:EN4669 Features · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. P-Channel Silico...


Sanyo Semicon Device

2SJ337

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Description
Ordering number:EN4669 Features · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. P-Channel Silicon MOSFET 2SJ337 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2083B [2SJ337] 6.5 5.0 4 2.3 0.5 5.5 1.5 7.0 unit:mm 2092B 0.85 0.7 0.6 123 2.3 2.3 0.8 1.6 7.5 1.2 0.5 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP [2SJ337] 6.5 2.3 5.0 0.5 4 0.8 5.5 1.5 2.5 7.0 1.2 0.85 1 0.6 2 3 2.3 2.3 0.5 1.2 0 to 0.2 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP-FA Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 41599TH (KT)/73094MT (KOTO) BX-0830 No.4669–1/4 2SJ337 Specifications ...




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