2SJ344

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ344 High Speed Switching Applications Analog Switch Applications Low threshold voltage: Vth = −0.8 to −2.5 V High speed Enhancement-mode Small package Complementary to 2SK1827 Marking Equivalent Circuit 2SJ344 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage DC drain current Drain power dissipation Channel temperature Storage temperature range Symbol VDS VGSS ID PD Tch Tstg Rating −50 −7 −50 100 150 −55~150 Unit V V mA mW °C °C JEDEC ― JEITA SC-70 TOSHIBA 2-2E1E Weight: 0.006 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain-source breakdown voltage Drain cut-off current Gate threshould voltage Forward transfer admittance Drain-source ON resistance Input capacitance Reverse transfer capacitance Out...