TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSV)
DC−DC Converter, Relay Drive and Motor Drive
z 4-V gate drive
z Low drain−source ON resistance : RDS (ON) = 33 mΩ (typ.)
z High forward transfer admittance : |Yfs| = 20 S (typ.)
z Low leakage current
: IDSS = −100 μA (max) (VDS = −60 V)
z Enhancement mode : Vth = −0.8~−2.0 V (VDS = −10 V, ID = −1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Drain−gate voltage (RGS = 20 kΩ)
DC (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
Repetitive avalanche energy (Note 3)
Storage temperature range
Weight: 1.9 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal resistance, channel to case
Thermal resistance, channel to
2.78 °C / W
62.5 °C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = −50 V, Tch = 25°C (initial), L = 1.44 mH, RG = 25 Ω, IAR = −20 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.