2SJ349

2SJ349 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSV) 2SJ349 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON-resistance : RDS (ON) = 33 mΩ (typ.) z High forward transfer admittance : |Yfs| = 20 S (typ.) z Low leakage current : IDSS = −100 μA (max) (VDS = −60 V) z Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Pulse(Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg −60 V −60 V ±20 V −20 A −80 A 45 W 800 mJ −20 A 4.5 mJ 150 °C −55 to 150 °C JEDEC ― JEITA SC-67 TOSHIBA 2-10R1B Weight: 1.9 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and M...