2SJ350

2SJ350 Silicon P-Channel MOS FET ADE-208-138 1st. Edition Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Outline TO-220FM D G 1 2 3 1. Gate 2. Drain 3. Source S 2SJ350 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings –120 ±20 –6 –12 –6 20 150 –55 to +150 Unit V V A A A W °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS V(BR)GSS I GSS –120 ±20 — — –1.0 — — |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 3.0 — — — — — — — — — Typ — — — — — 0.5 0.7 5.0 900 265 65 11 45 170 80 –1.2 240 Max — — ±10 –250 –2.0 0.7 0.9 — — — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns I F = –6 A, VGS = 0 I F = –6 A, VGS = 0, diF/dt = 50 A/µs I D = –4 A, VGS = –10 V, RL = 7.5 Ω Test conditions I D = –10 mA, VGS = 0 I G = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = –100 V, VGS = 0 I D = –1 mA, VDS = –10 V I D = –4 A, VGS = –10 V*1 I D = –4 A, VGS = –4 V*1 I D = –4 A, VDS = –10 V*1 VDS = –10 V...