2SJ352

2SJ351, 2SJ352 Silicon P-Channel MOS FET ADE-208-143 1st. Edition Application Low frequency power amplifier Complementary pair with 2SK2220, 2SK2221 Features High power gain Excellent frequency response High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics Equipped with gate protection diodes Ordering Information Type No. 2SJ351 2SJ352 VDSX –180 V –200 V 2SJ351, 2SJ352 Outline TO-3P D G 1 2 3 1. Gate 2. Source (Flange) 3. Drain S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SJ351 2SJ352 Gate to source voltage Drain current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1. Value at TC = 25°C VGSS ID I DR Pch* Tch Tstg 1 Symbol VDSX Ratings –180 –200 ±20 –8 –8 100 150 –55 to +150 Unit V V A A W °C °C 2 2SJ351, 2SJ352 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage 2SJ351 2SJ352 V(BR)GSS VGS(off) VDS(sat) |yfs| Ciss Coss Crss t on t off Symbol Min V(BR)DSX –180 –200 ±20 –0.15 — 0.7 — — — — — Typ — — — — — 1.0 800 1000 18 320 120 Max — — — –1.45 –12 1.4 — — — — — V V V S pF pF pF ns ns VDD = –30 V, ID = –4 A I G = ±100 µA, VDS = 0 I D = –100 mA, VDS = –10 V I D = –8 A, VGD = 0*1 I D = –3 A, VDS = –10 V*1 VGS = 5 V, VDS = –10 V, f = 1 MHz Unit V Test conditions I D = –10 mA, VGS = 10 V Gate to source breakdown voltage Gate to source cutoff voltage Drain to source saturation voltage Forward tran...