Document
Ordering number:ENN6422
P-Channel Silicon MOSFET
2SJ400
Ultrahigh-Speed Switching Applications
Features
· Low ON resistance. · Ultrahigh-speed switching. · 4V drive. · Enables simplified fabrication, high-density mounting, and miniaturization in end products due to the surface mountable package.
Package Dimensions
unit:mm 2093A
[2SJ400]
0.9
10.2 4.5 1.3
11.5
1.6
20.9
1.2
9.4
0.8
11.0
8.8
0.4 1 2 3
2.55
2.55
1 : Gate 2 : Drain 3 : Source SANYO : SMP
unit:mm 2090A
[2SJ400]
0.8 10.2 4.5 1.3
1.5max 8.8
9.9
2.7
3.0
2.55
1.2 2.55
1.35
1 0.8
2
3 0 to 0.3 0.4
2.55
2.55
1 : Gate 2 : Drain 3 : Source SANYO : SMP-FD
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
30300TS (KOTO) TA-2164 No.6422–1/4
2.7
1.4
2SJ400 Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg
PW≤10µs, duty cycle≤1% Tc=25˚C
Conditions
Ratings –30 ±20 –35 –140 1.65 70 150 –55 to +150
Unit V V A A W W
˚C ˚C
Electrical Characteristics at Ta = 25˚C
Parameter Drain-to-Source Breakdown Voltage Gate-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Symbol V(BR)DSS V(BR)GSS IDSS IGSS VGS(off) | yfs | RDS(on) RDS(on) Ciss Coss Crss td(on) tr td(off) tf VSD ID=–1mA, VGS=0 IG=±100µA, VDS=0 VDS=–30V, VGS=0 VGS=±16V, VDS=0 VDS=–10V, ID=–1mA VDS=–10V, ID=–18A ID=–18A, VGS=–10V ID=–18A, VGS=–4V VDS=–10V, f=1MHz VDS=–10V, f=1MHz VDS=–10V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit IS=–35A, VGS=0 –1.0 16 27 20 30 4000 2400 880 30 200 500 270 –1.0 –1.5 30 40 Conditions Ratings min –30 ±20 –100 ±10 –2.0 typ max Unit V V µA µA V S mΩ mΩ pF pF pF ns ns ns ns V
Switching Time Test Circuit
VDD=--30V Vin 0V --10V Vin PW=10µs D.C.≤1% P.G 50Ω 2SJ400 ID=--18A RL=1.67Ω VOUT
D G
S
No.6422–2/4
2SJ400
--70
ID -- VDS
V GS =-5 .0V
--70
ID -- VGS
VDS=--10V
Tc= --25 °C 75° C
--60
.5 --4
V
--60
Drain Current, ID – A
--50
Drain Current, ID – A
--4.0V
25°C
--50
--40
--40
--3.5V
--30
--30
--20
--3.0V
--20
--10 0 0 --2 --4 --6 --8
--2.5V
--10 IT00710
--10 0 0 --1 --2 --3 --4 --5 --6 IT00711
Drain-to-Source Voltage, VDS – V
100
Gate-to-Source Voltage, VGS – V
60
yfs -- ID
VDS=--10V Static Drain-to-Source On-State Resistance, RDS (on) – mΩ
RDS(on) -- VGS
Forward Transfer Admittance, | yfs | – S
7 5 3 2
Tc=25°C ID=--18A
50
Tc=
°C --25
°C
40
--75
10 7 5 3 2
25°C
30
20
10
1.0 3 5 --1.0 2 3 5
0
Drain Current, ID – A
7 --10
2
3
5
7 --100 IT00712
0
--2
--4
--6
--8
--10
--12
--14 IT00713
Gate-to-Source Voltage, VGS – V
2 10000
60
RDS(on) -- Tc
Ciss, Coss, Crss -- VDS
f=1MHz
Static Drain-to-Source On-State Resistance, RDS (on) – mΩ
50
7 5
Ciss
Ciss, Coss, Crss – pF
40
3 2 1000 7 5 3 2 100 7 5
30
--1 I D=
8
--4V S= G V A,
Coss
Crss
20
-18 I D=-
A
=--10 , VGS
V
10
0 --80
--40
0
40
80
120
160 IT00714 2 --100 7 5 3 2 --10 7 5 3 2 --1.0 7
0
--5
--10
--15
--20
--25
--30 IT00715
Case Temperature, Tc – ˚C
2 1000 7 5 3 2 100 7 5 3 2 10 3 5 7 --1.0 2 3 5
Drain-to-Source Voltage, VDS – V
SW Time -- ID
VDD=--30V VGS=--10V td(off)
ASO
IDP=--140A
Switching Time, SW Time – ns
10
ID=--35A
Drain Current, ID – A
1m
0µ s
10 µs
s
tf
tr
ms Operation in 0m DC s this area is op era limited by RDS(on). tio n
10
10
td(on)
Tc=25°C Single pulse
3 5 7 --1.0 2 3 5 7 --10 2 3 5
Drain Current, ID – A
7 --10
2
3
5
IT00716
Drain-to-Source Voltage, VDS – V
IT00717
No.6422–3/4
2SJ400
2.0
PD -- Ta
Allowable Power Dissipation, PD – W
80 70 60 50 40 30 20 10 0
PD -- Tc
Allowable Power Dissipation, PD – W
1.65 1.6
1.2
N
o
he
at
sin
k
0.8
0.4
0 0 20 40 60 80 100 120 140 160
0
20
.