DatasheetsPDF.com

2SJ400 Dataheets PDF



Part Number 2SJ400
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description P-Channel MOSFET
Datasheet 2SJ400 Datasheet2SJ400 Datasheet (PDF)

Ordering number:ENN6422 P-Channel Silicon MOSFET 2SJ400 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · 4V drive. · Enables simplified fabrication, high-density mounting, and miniaturization in end products due to the surface mountable package. Package Dimensions unit:mm 2093A [2SJ400] 0.9 10.2 4.5 1.3 11.5 1.6 20.9 1.2 9.4 0.8 11.0 8.8 0.4 1 2 3 2.55 2.55 1 : Gate 2 : Drain 3 : Source SANYO : SMP unit:mm 2090A [2SJ400] 0.8 10.2.

  2SJ400   2SJ400


Document
Ordering number:ENN6422 P-Channel Silicon MOSFET 2SJ400 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · 4V drive. · Enables simplified fabrication, high-density mounting, and miniaturization in end products due to the surface mountable package. Package Dimensions unit:mm 2093A [2SJ400] 0.9 10.2 4.5 1.3 11.5 1.6 20.9 1.2 9.4 0.8 11.0 8.8 0.4 1 2 3 2.55 2.55 1 : Gate 2 : Drain 3 : Source SANYO : SMP unit:mm 2090A [2SJ400] 0.8 10.2 4.5 1.3 1.5max 8.8 9.9 2.7 3.0 2.55 1.2 2.55 1.35 1 0.8 2 3 0 to 0.3 0.4 2.55 2.55 1 : Gate 2 : Drain 3 : Source SANYO : SMP-FD Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 30300TS (KOTO) TA-2164 No.6422–1/4 2.7 1.4 2SJ400 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Tc=25˚C Conditions Ratings –30 ±20 –35 –140 1.65 70 150 –55 to +150 Unit V V A A W W ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Drain-to-Source Breakdown Voltage Gate-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Symbol V(BR)DSS V(BR)GSS IDSS IGSS VGS(off) | yfs | RDS(on) RDS(on) Ciss Coss Crss td(on) tr td(off) tf VSD ID=–1mA, VGS=0 IG=±100µA, VDS=0 VDS=–30V, VGS=0 VGS=±16V, VDS=0 VDS=–10V, ID=–1mA VDS=–10V, ID=–18A ID=–18A, VGS=–10V ID=–18A, VGS=–4V VDS=–10V, f=1MHz VDS=–10V, f=1MHz VDS=–10V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit IS=–35A, VGS=0 –1.0 16 27 20 30 4000 2400 880 30 200 500 270 –1.0 –1.5 30 40 Conditions Ratings min –30 ±20 –100 ±10 –2.0 typ max Unit V V µA µA V S mΩ mΩ pF pF pF ns ns ns ns V Switching Time Test Circuit VDD=--30V Vin 0V --10V Vin PW=10µs D.C.≤1% P.G 50Ω 2SJ400 ID=--18A RL=1.67Ω VOUT D G S No.6422–2/4 2SJ400 --70 ID -- VDS V GS =-5 .0V --70 ID -- VGS VDS=--10V Tc= --25 °C 75° C --60 .5 --4 V --60 Drain Current, ID – A --50 Drain Current, ID – A --4.0V 25°C --50 --40 --40 --3.5V --30 --30 --20 --3.0V --20 --10 0 0 --2 --4 --6 --8 --2.5V --10 IT00710 --10 0 0 --1 --2 --3 --4 --5 --6 IT00711 Drain-to-Source Voltage, VDS – V 100 Gate-to-Source Voltage, VGS – V 60 yfs -- ID VDS=--10V Static Drain-to-Source On-State Resistance, RDS (on) – mΩ RDS(on) -- VGS Forward Transfer Admittance, | yfs | – S 7 5 3 2 Tc=25°C ID=--18A 50 Tc= °C --25 °C 40 --75 10 7 5 3 2 25°C 30 20 10 1.0 3 5 --1.0 2 3 5 0 Drain Current, ID – A 7 --10 2 3 5 7 --100 IT00712 0 --2 --4 --6 --8 --10 --12 --14 IT00713 Gate-to-Source Voltage, VGS – V 2 10000 60 RDS(on) -- Tc Ciss, Coss, Crss -- VDS f=1MHz Static Drain-to-Source On-State Resistance, RDS (on) – mΩ 50 7 5 Ciss Ciss, Coss, Crss – pF 40 3 2 1000 7 5 3 2 100 7 5 30 --1 I D= 8 --4V S= G V A, Coss Crss 20 -18 I D=- A =--10 , VGS V 10 0 --80 --40 0 40 80 120 160 IT00714 2 --100 7 5 3 2 --10 7 5 3 2 --1.0 7 0 --5 --10 --15 --20 --25 --30 IT00715 Case Temperature, Tc – ˚C 2 1000 7 5 3 2 100 7 5 3 2 10 3 5 7 --1.0 2 3 5 Drain-to-Source Voltage, VDS – V SW Time -- ID VDD=--30V VGS=--10V td(off) ASO IDP=--140A Switching Time, SW Time – ns 10 ID=--35A Drain Current, ID – A 1m 0µ s 10 µs s tf tr ms Operation in 0m DC s this area is op era limited by RDS(on). tio n 10 10 td(on) Tc=25°C Single pulse 3 5 7 --1.0 2 3 5 7 --10 2 3 5 Drain Current, ID – A 7 --10 2 3 5 IT00716 Drain-to-Source Voltage, VDS – V IT00717 No.6422–3/4 2SJ400 2.0 PD -- Ta Allowable Power Dissipation, PD – W 80 70 60 50 40 30 20 10 0 PD -- Tc Allowable Power Dissipation, PD – W 1.65 1.6 1.2 N o he at sin k 0.8 0.4 0 0 20 40 60 80 100 120 140 160 0 20 .


2SJ399 2SJ400 2SJ401


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)