2SJ402
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSV)
2SJ402
DC−DC Converter, Relay Drive and M...
2SJ402
TOSHIBA Field Effect
Transistor Silicon P Channel MOS Type (L2−π−MOSV)
2SJ402
DC−DC Converter, Relay Drive and Motor Drive Applications
Unit: mm
z 4-V gate drive
z Low drain−source ON resistance
: RDS (ON) = 29 mΩ (typ.)
z High forward transfer admittance
: |Yfs| = 23 S (typ.)
z Low leakage current : IDSS = −100 μA (max) (VDS = −60 V) z Enhancement mode : Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage
Drain current
DC (Note 1) Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy (Note 2)
VDSS VDGR VGSS
ID IDP PD
EAS
−60
V
−60
V
±20
V
−30
A
−120
A
100
W
936
mJ
Avalanche current
IAR
Repetitive avalenche energy (Note 3)
EAR
Channel temperature
Tch
Storage temperature range
Tstg
−30
A
10
mJ
150
°C
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability tes...