2SJ409L

2SJ409(L), 2SJ409(S) Silicon P-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V Gate drive device can be driven from 5 V source Suitable for Switching regulator, DC - DC converter Outline LDPAK 4 4 1 2 1 D G 2 3 3 S 1. Gate 2. Drain 3. Source 4. Drain 2SJ409(L), 2SJ409(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings –100 ±20 –20 –80 –20 75 150 –55 to +150 Unit V V A A A W °C °C 2 2SJ409(L), 2SJ409(S) Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min –100 ±20 — — –1.0 — — Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 7.5 — — — — — — — — — Typ — — — — — 0.12 0.16 12 1860 680 145 15 115 320 170 –1.05 280 Max — — ±10 –250 –2.0 0.16 0.22 — — — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns I F = –20 A, VGS = 0 I F = ...