P-Channel MOSFET
2SJ425
Absolute Maximum Ratings
Symbol VDSS VGSS ID ID (pulse) PD Tch Tstg ± Ratings –60 ± 20 8 150ºC)
(Ta = 25ºC)
Exte...
Description
2SJ425
Absolute Maximum Ratings
Symbol VDSS VGSS ID ID (pulse) PD Tch Tstg ± Ratings –60 ± 20 8 150ºC)
(Ta = 25ºC)
External dimensions 1 ...... FM20
Electrical Characteristics
Symbol V(BR) DSS I GSS I DSS VTH Re (yfs) RDS (on) Ciss Coss t on t off –2.0 1.8 2.8 0.2 580 360 90 45 0.28 min –60 ± 500 Ratings typ max Unit V nA µA V S Ω pF pF ns ns
(Ta = 25ºC)
Unit V V A A W ºC ºC
Conditions I D = –250µA, VGS = 0V VGS = ±
in
20V
32 (Tch
30 (Tc = 25ºC) 150 –55 to +150
VDS — I D Characteristics
–10 –8 –6 –4 –2 – 5V 0 0 –2 –4 –6 –8 –10 0 – 6V VGS = –10V – 7V –6 –8
RDS (ON) (mΩ)
I D (A)
I D (A)
VDS (V)
I D — Re (yfs) Characteristics
10 T C = –55ºC 25ºC 125ºC VDS = –10V –4 –5
5
VDS (V)
–3 –2 ID = – 8A –1 ID = – 4A
RDS (ON) (mΩ)
Re (yfs) (S)
1
0.5 0.3 – 0.1 0.5 – 1 –5 –10 0 –5 – 10
I D (A)
VDS — Capacitance Characteristics
2000 1000 VGS = 0V f = 1MHz Ciss 500 –8
Capacitance (pF)
PD (W)
I DR (A)
I D (A)
Coss
100 50 Crss –2 VGS = 0V
20
0
–10
– 20
– 30
– 40
VDS (V)
46
±
–250 –4.0
VDS = –60V, VGS = 0V VDS = –10V, I D = –250µA VDS = –10V, I D = –4.0A VGS = –10V, I D = –4.0A VDS = –25V, f = 1.0MHz, VGS = 0V I D = –4.0A, VDD = –30V, VGS = –10V, See Figure 3 on Page 5.
VGS — I D Characteristics
250 VDS = –10V 200 150 100
I D — RDS (ON) Characteristics
VGS = – 10V
–4 TC = 125ºC 25ºC – 55ºC
–2
50 0
0
–2
–4
–6
–8
0
–1
–2
–3
–4
–5
–6
–7
–8
VGS (V)
I D (A)
VGS — VDS Characteristics
400
TC — RDS (ON) Characteristics
ID = – 4A VGS = – 10V 300...
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