2SJ448

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ448 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SJ448 is P-Channel MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeters) 10.0 ±0.3 4.5 ±0.2 3.2 ±0.2 2.7 ±0.2 FEATURES Low On-Resistance RDS(on) = 2.0 Ω MAX. (@ VGS = –10 V, ID = –2.0 A) 15.0 ±0.3 3 ±0.1 4 ±0.2 Built-in G-S Gate Protection Diodes High Avalanche Capability Ratings Isolated TO-220 Package ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* VDSS VGSS ID(DC) ID(pulse) –250 m25 m4.0 m16 V V A A W W ˚C 1 2 3 0.7 ±0.1 2.54 13.5 MIN. 12.0 ±0.2 Low Ciss Ciss = 470 pF TYP. 1.3 ±0.2 1.5 ±0.2 2.54 0.65 ±0.1 2.5 ±0.1 Total Power Dissipation (Tc = 25 ˚C) PT1 Total Power Dissipation (TA = 25 ˚C) PT2 Channel Temperature Storage Temperature Single Avalanche Current** Single Avalanche Energy** * PW ≤ 10 µs, Duty Cycle ≤ 1 % Tch Tstg IAS EAS 30 2.0 150 –4.0 80 1. Gate 2. Drain 3. Source –55 to +150 ˚C A mJ MP-45F(ISOLATED TO-220) Drain ** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = –20 V → 0 Gate Body Diode Gate Protection Diode Source Document No. D10029EJ1V0DS00 Date Published May 1995 P Printed in Japan © 1995 2SJ448 ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) CHARACTERISTIC Drain to Source On-Resistance Gate to Source Cutoff Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leak...