2SJ462

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ462 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION The 2SJ462 is a switching device which can be driven directly by an IC operating at 3 V. The 2SJ462 features a low on-state resistance and can be driven by a low voltage power source, so it is suitable for applications such as power management. Package Drawings (unit : mm) 5.7 ±0.1 2.0 ±0.2 1.5 ±0.1 3.65 ±0.1 FEATURES 1.0 1 0.5 ±0.1 2 3 Can be driven by a 2.5 V power source. New-type compact package. Has advantages of packages for small signals and for power transistors, and compensates those disadvantages. Low on-state resistance. RDS(ON) : 0.29 Ω MAX. @VGS = –2.5 V, ID = –0.5 A RDS(ON) : 0.19 Ω MAX. @VGS = –4.0 V, ID = –1.0 A 0.5 ±0.1 2.1 0.4 ±0.05 0.85 ±0.1 4.2 Equivalent Circuit Electrode Connection 1. Source 2. Drain 3. Gate ABSOLUTE MAXIMUM RATINGS (TA = +25 ˚C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse) Total Power Dissipation Channel Temperature Storage Temperature VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg –12 ± 8.0 ± 2.5 ± 5.0* 2.0** 150 –55 to +150 V V A A W ˚ C ˚ C Gate Protect Diode Gate Drain Internal Diode Source Marking : UA3 * PW ≤ 10 ms, Duty Cycle ≤ 1 % ** Mounted on ceramic board of 7.5 cm2 × 0.7 mm Document No. D11449EJ1V0DS00 (1st edition) Date Published April 1996 P Printed in Japan 5.4 ±0.25 0.55 © 1996 2SJ462 ELECTRICAL SPECIFICATIONS (TA = +25 ˚C) Parameter Drai...