2SJ466

Ordering number:ENN5491B P-Channel Silicon MOSFET 2SJ466 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · 4V drive. · Enables simplified fabrication, high-density mounting, and miniaturization in end products due to the surface mountable package. Package Dimensions unit:mm 2128 [2SJ466] 8.2 7.8 6.2 3 8.4 10.0 0.4 0.2 0.6 4.2 1.2 1.0 2.54 1 2 1.0 2.54 6.2 5.2 0.3 0.6 7.8 5.08 10.0 6.0 2.5 0.7 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Tc=25˚C Conditions Ratings 1 : Gate 2 : Source 3 : Drain SANYO : ZP Unit –30 ±20 –35 –140 50 150 V V A A W ˚C ˚C –55 to +150 Electrical Characteristics at Ta = 25˚C Parameter Drain-to-Source Breakdown Voltage Gate-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source ON-State Resistance Symbol V(BR)DSS V(BR)GSS IDSS IGSS VGS(off) | yfs | RDS(on) ID=–1mA, VGS=0 IG=±100µA, VDS=0 VDS=–30V, VGS=0 VGS=±16V, VDS=0 VDS=–10V, ID=–1mA VDS=–10V, ID=–18A ID=–18A, VGS=–10V ID=–18A, VGS=–4V –1.0 16 27 20 30 30 40 Conditions Ratings min –30 ±20 –100 ±10 –2.0 typ max Unit V V µA µA V S mΩ mΩ Continued on next page. Any and all SANYO products described or conta...