DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ492
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
ORDERING INFORMATION
PA...
DATA SHEET
MOS FIELD EFFECT
TRANSISTOR
2SJ492
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
ORDERING INFORMATION
PART NUMBER 2SJ492 2SJ492-S 2SJ492-ZJ PACKAGE TO-220AB TO-262 TO-263
DESCRIPTION
This product is P-Channel MOS Field Effect
Transistor designed for DC/DC converters and motor/lamp driver circuits.
FEATURES
Low on-state resistance RDS(on)1 = 100 mΩ (MAX.) (VGS = –10 V, ID = –10 A) RDS(on)2 = 185 mΩ (MAX.) (VGS = –4 V, ID = –10 A) Low Ciss: Ciss = 1210 pF (TYP.) Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse)
Note2 Note1
VDSS VGSS(AC) VGSS(DC) ID(DC) ID(pulse) PT PT Tch Tstg
–60
# 20
V V V A A W W °C °C A mJ
–20, 0
# 20 # 80
Total Power Dissipation (TA = 25°C) Total Power Dissipation (TC = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
Note3 Note3
1.5 70 150 –55 to +150 –20 40
IAS EAS
Notes 1. f = 20 kHz, Duty Cycle ≤ 10% (+Side) 2. PW ≤ 10 µs, Duty Cycle ≤ 1 % 3. Starting Tch = 25 °C, RA = 25 Ω, VGS = –20 V ¡ 0
THERMAL RESISTANCE
Channel to Case Channel to Ambient Rth(ch-C) Rth(ch-A) 1.79 83.3 °C/W °C/W
The information in this document is subject to change without notice.
Document No. D11264EJ1V0DS00 (1st edition) Date Published December 1998 NS CP(K) Printed in Japan
©
1998
2SJ492
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARAC...