2SJ494

DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SJ494 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for high current switching applications. PACKAGE DIMENSIONS (in millimeter) 10.0±0.3 4.5±0.2 3.2±0.2 2.7±0.2 15.0±0.3 3±0.1 4±0.2 FEATURES Super Low On-State Resistance RDS(on)1 = 50 m: Max. (VGS = –10 V, ID = –10 A) RDS(on)2 = 88 m: Max. (VGS = –4 V, ID = –10 A) Low Ciss Ciss = 2360 pF Typ. 0.7±0.1 2.54 Built-in Gate Protection Diode 13.5 MIN. 12.0±0.2 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage Gate to Source Voltage* Gate to Source Voltage Drain Current (DC) Drain Current (pulse)** Total Power Dissipation (TC = 25 °C) Total Power Dissipation (TA = 25 °C) Channel Temperature Storage Temperature VDSS VGSS (AC) VGSS (DC) ID (DC) ID (pulse) PT PT Tch Tstg –60 – +20 –20, 0 – +20 – +80 35 2.0 150 –55 to +150 V V V A A W W °C °C 1.3±0.2 1.5±0.2 2.54 2.5±0.1 0.65±0.1 1. Gate 2. Drain 3. Source 1 2 3 ISOLATED TO-220 (MP-45F) Drain * f = 20 kHz, Duty Cycle d 10% (+Side) ** PW d 10 Ps, Duty Cycle d 1% Gate Body Diode THERMAL RESISTANCE Channel to Case Channel to Ambient Rth (ch-C) Rth (ch-A) 3.57 °C/W 62.5 °C/W Gate Protection Diode Source The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage ...