2SJ496
Silicon P-Channel MOS FET High Speed Power Switching
ADE-208-482 1st. Edition Features
Low on-resistance R DS(on) = 0.12Ω typ. (at VGS = –10 V, I D = –2.5 A) 4V gate drive devices. Large current capacitance ID = –5 A
Outline
TO-92 Mod
D G
32
1 1. Source 2. Drain 3. Gate
S
2SJ496
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source v...
