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2SJ506L Dataheets PDF



Part Number 2SJ506L
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description P-Channel MOSFET
Datasheet 2SJ506L Datasheet2SJ506L Datasheet (PDF)

2SJ506(L), 2SJ506(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-548 Target Specification 1st. Edition Features • Low on-resistance R DS(on) = 0.065 Ω typ. (at V GS = –10V, ID = –5A) • Low drive current • High speed switching • 4V gate drive devices. Outline DPAK–2 4 D 4 1 2 G 3 1 2 S 3 1. Gate 2. Drain 3. Source 4. Drain 2SJ506(L), 2SJ506(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body t.

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2SJ506(L), 2SJ506(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-548 Target Specification 1st. Edition Features • Low on-resistance R DS(on) = 0.065 Ω typ. (at V GS = –10V, ID = –5A) • Low drive current • High speed switching • 4V gate drive devices. Outline DPAK–2 4 D 4 1 2 G 3 1 2 S 3 1. Gate 2. Drain 3. Source 4. Drain 2SJ506(L), 2SJ506(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg Note2 Note1 Ratings –30 ±20 –10 –40 –10 20 150 –55 to +150 Unit V V A A A W °C °C 2 2SJ506(L), 2SJ506(S) Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltege drain current Gate to source leak current Symbol V(BR)DSS V(BR)GSS I DSS I GSS Min –30 ±20 — — –1.0 — — 10 — — — — — — — — — Typ — — — — — 65 110 16 660 440 140 12 65 85 65 –1.05 65 Max — — –10 ±10 –2.0 85 180 — — — — — — — — — — Unit V V µA µA V mΩ mΩ S pF pF pF ns ns ns ns V ns I F = –10A, VGS = 0 I F = –10A, VGS = 0 diF/ dt = 50A/µs Test Conditions I D = –10mA, VGS = 0 I G = ±100µA, VDS = 0 VDS = –30 V, VGS = 0 VGS = ±16V, VDS = 0 I D = –1mA, VDS = –10V I D = –5A, VGS = –10VNote3 I D = –5A, VGS = –4V Note3 I D = –5A, VDS = –10V Note3 VDS = –10V VGS = 0 f = 1MHz I D = –5A, RL = 2Ω VGS = –10V Gate to source cutoff voltage VGS(off) Static drain to source on state RDS(on) resistance Forward transfer admittance Input capacitance Output capacitance RDS(on) |yfs| Ciss Coss Reverse transfer capacitance Crss Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 3. Pulse test t d(on) tr t d(off) tf VDF t rr 3 2SJ506(L), 2SJ506(S) Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area Ta = 25 °C 10 PW 40 Pch (W) –500 –200 I D (A) 30 –100 –50 –20 –10 –5 –2 –1 –0.5 –0.2 –0.1 10 µs Channel Dissipation Drain Current 20 DC =1 Op 10 Operation in this area is limited by R DS(on) –0.5 –1 –2 0m s( 1s er ho a (T tio t) c= n 25 °C ) 0 1 m µs s 0 50 100 150 Tc (°C) 200 –0.1 –0.2 –5 –10 –20 –50 Case Temperature Drain to Source Voltage V DS (V) I D (A) ID (A) Typical Output Characteristics –10 V –8 V –20 –4.5 V Pulse Test –5 V –6 V –16 –4 V –12 Typical Transfer Characteristics –20 V DS = –10 V Pulse Test 25 °C –16 –12 Drain Current Drain Current –3.5 V –8 –3 V –4 VGS = –2.5 V 0 –4 –8 –12 Drain to Source Voltage –16 –20 V DS (V) –8 –4 75 °C Tc = –25 °C –1 –2 –3 –4 V GS (V) –5 0 Gate to Source Voltage 4 2SJ506(L), 2SJ506(S) Drain to Source Saturation Voltage vs. Gate to Source Voltage –2 Drain to Source Saturation Voltage V DS(on) (V) Pulse Test Static Drain to Source on State Resistance vs. Drain Current 1000 500 200 100 50 VGS = –4 V –10 V –1.6 –1.2 –0.8 I D = –10 A –0.4 –5 A –2 A 0 –4 –8 –12 –16 V GS (V) –20 Drain to Source On State Resistance R DS(on) ( Ω ) 20 10 –1 –2 –5 –10 Pulse Test –20 –50 –100 Gate to Source Voltage Drain Current I D (A) Static Drain to Source on State Resistance R DS(on) ( Ω) Forward Transfer Admittance |y fs | (S) Static Drain to Source on State Resistance vs. Temperature 200 –5 A Pulse Test I D = –10 A 160 V GS = –4 V –2 A 120 –10 A 80 V GS = –10 V –2,–5 A 100 50 20 10 5 2 1 Forward Transfer Admittance vs. Drain Current Tc = –25 °C 25 °C 75 °C V DS = –10 V Pulse Test –5 –10 –20 –50 40 0 –40 0 40 80 Tc 120 (°C) 160 0.5 –0.1–0.2 –0.5 –1 –2 Case Temperature Drain Current I D (A) 5 2SJ506(L), 2SJ506(S) Body to Drain Diode Reverse Recovery Time 100 Reverse Recovery Time trr (ns) 5000 2000 50 Capacitance C (pF) 1000 500 200 100 50 20 10 0 –10 –20 –30 –40 –50 Drain to Source Voltage V DS (V) Crss Ciss Coss VGS = 0 f = 1 MHz Typical Capacitance vs. Drain to Source Voltage 20 di / dt = 50 A / µs VGS = 0, Ta = 25 °C 10 –0.1 –0.2 –0.5 –1 –2 –5 –10 –20 I DR (A) Reverse Drain Current Dynamic Input Characteristics V DS (V) V GS (V) 0 VDD = –5 V –10 V –25 V V DS –4 0 1000 500 Switching Time t (ns) 200 100 50 20 10 Switching Characteristics V GS = –10 V, V DD = –10 V PW = 10 µs, duty < =1% –10 Drain to Source Voltage Gate to Source Voltage –20 –30 V DD = –25 V –10 V –5 V V GS –8 t d(off) tf tr t d(on) –12 –40 I = –10 A –50 D 0 8 –16 –20 40 16 Gate Charge 32 24 Qg (nc) 5 –0.1 –0.2 –0.5 –1 –2 –5 –10 –20 Drain Current I D (A) –50 6 2SJ506(L), 2SJ506(S) Reverse Drain Current vs. Source to Drain Voltage –20 Reverse Drain Current I DR (A) Pulse Test –16 –10 V –12 V GS = 0.5 V –5 V –8 –4 0 –0.4 –0.8 –1.2 –1.6 –2.0 Source to Drain Voltage V SD (V) Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance γ s (t) Tc = 25°C 1 D=1 0.5 0.3 0.2 0.1 0.0.


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