2SJ529S

2SJ529(L),2SJ529(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-654A (Z) 2nd. Edition Jun 1998 Features Low on-resistance R DS(on) = 0.12 Ω typ. 4 V gete drive devices High speed switching Outline DPAK–2 4 D 4 1 2 G 3 1 2 S 3 1. Gate 2. Drain 3. Source 4. Drain 2SJ529(L),2SJ529(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalenche current Avalenche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note3 Note3 Note2 Note1 Ratings –60 ±20 –10 –40 –10 –10 8.5 20 150 –55 to +150 Unit V V A A A A mJ W °C °C EAR Pch Tch Tstg 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltege drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Note: 4. Pulse test Symbol V(BR)DSS V(BR)GSS I DSS I GSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr Min –60 ±20 — — –1.0 — — 4.5 — — — — — — — — — Typ — — — — ...