Document
2SJ531
Silicon P Channel MOS FET High Speed Power Switching
ADE-208-646A (Z) 2nd. Edition Jun 1998 Features
• Low on-resistance R DS(on) = 0.050 Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching.
Outline
TO–220CFM
D
G 1 2
3
S
1. Gate 2. Drain 3. Source
2SJ531
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse)
Note1
Ratings –60 ±20 –18 –72 –18
Unit V V A A A A mJ W °C °C
Body-drain diode reverse drain current I DR Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: I AP
Note3 Note3 Note2
–18 27 30 150 –55 to +150
EAR
Pch Tch
Tstg
1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Tc = 25° C 3. Value at Tch = 25° C, Rg ≥ 50 Ω
Electrical Characteristics (Ta = 25°C)
Item Symbol Min –60 ±20 — — –1.0 — — 10 — — — — — — — — — Typ — — — — — 0.050 0.070 16 1300 650 180 14 95 190 135 –1.0 70 Max — — –10 ±10 –2.0 0.065 0.110 — — — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns I F = –18A, VGS = 0 I F = –18A, VGS = 0 diF/ dt =50A/µs Test Conditions I D = –10mA, VGS = 0 I G = ±100µA, VDS = 0 VDS = –60 V, VGS = 0 VGS = ±16V, VDS = 0 I D = –1mA, VDS = –10V I D = –9A, VGS = –10V Note4 I D = –9A, VGS = –4V Note4 I D = –9A, VDS = -10V Note4 VDS = –10V VGS = 0 f = 1MHz VGS = –10V, I D = –9A RL =3.33Ω Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage V(BR)GSS Zero gate voltege drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time I DSS I GSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf
Body–drain diode forward voltage VDF Body–drain diode reverse recovery time Note: 4. Pulse test t rr
2
2SJ531
Main Characteristics
Power vs. Temperature Derating 40 1000
Maximum Safe Operation Area
Pch (W)
I D (A)
300 100 30 10 3 1 0.3
DC
30
10 µs
PW
Op er
Channel Dissipation
10
= 10
Drain Current
1
ms
c=
20
m
0µ
sh
s
s
at
10
Operation in this area is limited by R DS(on)
ion
(1
(T
ot
)
)
25
°C
0
50
100
150 Tc (°C)
200
Case Temperature
0.1 Ta = 25 °C 3 30 0.1 0.3 1 10 100 Drain to Source Voltage V DS (V)
–20
Typical Output Characteristics –10 V –6 V –4 V Pulse Test
Typical Transfer Characteristics –20 V DS = –10 V Pulse Test
I D (A)
–3 V –12
ID
(A)
–16
–3.5 V
–16
–12 Tc = 75°C
Drain Current
–8 –2.5 V –4 VGS = –2 V 0 –2 –4 –6 Drain to Source Voltage –8 –10 V DS (V)
Drain Current
25°C
–8
–25°C –4
0
–1 –2 –3 Gate to Source Voltage
–4 –5 V GS (V)
3
2SJ531
Drain to Source Saturation Voltage vs. Gate to Source Voltage
Drain to Source Saturation Voltage V DS(on) (V)
Pulse Test
–2.5 –2.0 –1.5 –1.0 –0.5 I D = –20 A –10 A –5 A –12 –4 –8 Gate to Source Voltage –16 –20 V GS (V)
Drain to Source On State Resistance R DS(on) ( Ω )
–3.0
Static Drain to Source on State Resistance vs. Drain Current 1 Pulse Test 0.5 0.2 0.1 VGS = –4 V –10 V
0.05
0.02 0.01 –1
0
–2
–5 –10 –20 –50 –100 Drain Current I D (A)
Static Drain to Source on State Resistance R DS(on) ( Ω)
Forward Transfer Admittance |y fs | (S)
Static Drain to Source on State Resistance vs. Temperature 0.30 Pulse Test 0.25 0.20 0.15 0.10 0.05 –10 V 0 –40 0 40 80 120 160 Case Temperature Tc (°C) VGS = –4 V –5, –10, –20 A I D = –20 A –5, –10 A
Forward Transfer Admittance vs. Drain Current 100 30 Tc = –25 °C 10 3 75 °C 1 0.3 25 °C
0.1 –0.1 –0.3 –1 –3 –10 –30 Drain Current I D (A)
V DS = –10 V Pulse Test –100
4
2SJ531
Body–Drain Diode Reverse Recovery Time 100
Reverse Recovery Time trr (ns)
10000 3000
Typical Capacitance vs. Drain to Source Voltage VGS = 0 f = 1 MHz Ciss
50
Capacitance C (pF)
1000 300 100 30 10 0 –10 –20 –30 –40 –50 Drain to Source Voltage V DS (V) Coss
20 di / dt = 50 A / µs V GS = 0, Ta = 25 °C –2 –5 –10 –20 I DR (A)
Crss
10 –0.1 –0.2 –0.5 –1
Reverse Drain Current
Dynamic Input Characteristics
V DS (V) V GS (V)
Switching Characteristics 0 1000 V GS = –10 V, V DD = –30 V 500 PW = 5 µs, duty < 1 %
Switching Time t (ns)
0 V DD = –10 V –25 V –50 V
–20
–4
t d(off) 200 tf 100 50 tr t d(on)
Drain to Source Voltage
–40 V DS V DD = –50 V –25 V –10 V I D = –18 A 16 32 Gate Charge
V GS
–8
–60
–12
–80
–16 –20 80
Gate to Source Voltage
20 10 –0.1 –0.2 –0.5 –1
–100 0
48 64 Qg (nc)
–2
–5 –10 –20 I D (A)
Drain Current
5
2SJ531
Reverse Drain Current vs. Source to Drain Voltage –10 V –16 –5 V V GS = 0, 5 V Maximum Avalanche Energy vs. Channel Temperature Derating
–20
Repetitive Avalanche Energy EAR (mJ)
50 I AP = –18 A V DD = –25 V duty < 0.1 % Rg > 50 Ω
Reverse Drain Current I DR (A)
40
–12
30
–8
20
–4 Pulse Test 0 –0.4 –0.8 –1.2 –1.6 –2.0 Source to Drain Voltage V SD (V)
10 0 25
50
75
100
125
150
Channel Temperature Tch (°C)
Aval.