DatasheetsPDF.com

2SJ531 Dataheets PDF



Part Number 2SJ531
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description Silicon P-Channel MOSFET
Datasheet 2SJ531 Datasheet2SJ531 Datasheet (PDF)

2SJ531 Silicon P Channel MOS FET High Speed Power Switching ADE-208-646A (Z) 2nd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.050 Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline TO–220CFM D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SJ531 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings –60 ±20 –18 –72 –18 Unit V V A A A A.

  2SJ531   2SJ531


Document
2SJ531 Silicon P Channel MOS FET High Speed Power Switching ADE-208-646A (Z) 2nd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.050 Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline TO–220CFM D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SJ531 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings –60 ±20 –18 –72 –18 Unit V V A A A A mJ W °C °C Body-drain diode reverse drain current I DR Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: I AP Note3 Note3 Note2 –18 27 30 150 –55 to +150 EAR Pch Tch Tstg 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Tc = 25° C 3. Value at Tch = 25° C, Rg ≥ 50 Ω Electrical Characteristics (Ta = 25°C) Item Symbol Min –60 ±20 — — –1.0 — — 10 — — — — — — — — — Typ — — — — — 0.050 0.070 16 1300 650 180 14 95 190 135 –1.0 70 Max — — –10 ±10 –2.0 0.065 0.110 — — — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns I F = –18A, VGS = 0 I F = –18A, VGS = 0 diF/ dt =50A/µs Test Conditions I D = –10mA, VGS = 0 I G = ±100µA, VDS = 0 VDS = –60 V, VGS = 0 VGS = ±16V, VDS = 0 I D = –1mA, VDS = –10V I D = –9A, VGS = –10V Note4 I D = –9A, VGS = –4V Note4 I D = –9A, VDS = -10V Note4 VDS = –10V VGS = 0 f = 1MHz VGS = –10V, I D = –9A RL =3.33Ω Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage V(BR)GSS Zero gate voltege drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time I DSS I GSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf Body–drain diode forward voltage VDF Body–drain diode reverse recovery time Note: 4. Pulse test t rr 2 2SJ531 Main Characteristics Power vs. Temperature Derating 40 1000 Maximum Safe Operation Area Pch (W) I D (A) 300 100 30 10 3 1 0.3 DC 30 10 µs PW Op er Channel Dissipation 10 = 10 Drain Current 1 ms c= 20 m 0µ sh s s at 10 Operation in this area is limited by R DS(on) ion (1 (T ot ) ) 25 °C 0 50 100 150 Tc (°C) 200 Case Temperature 0.1 Ta = 25 °C 3 30 0.1 0.3 1 10 100 Drain to Source Voltage V DS (V) –20 Typical Output Characteristics –10 V –6 V –4 V Pulse Test Typical Transfer Characteristics –20 V DS = –10 V Pulse Test I D (A) –3 V –12 ID (A) –16 –3.5 V –16 –12 Tc = 75°C Drain Current –8 –2.5 V –4 VGS = –2 V 0 –2 –4 –6 Drain to Source Voltage –8 –10 V DS (V) Drain Current 25°C –8 –25°C –4 0 –1 –2 –3 Gate to Source Voltage –4 –5 V GS (V) 3 2SJ531 Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Saturation Voltage V DS(on) (V) Pulse Test –2.5 –2.0 –1.5 –1.0 –0.5 I D = –20 A –10 A –5 A –12 –4 –8 Gate to Source Voltage –16 –20 V GS (V) Drain to Source On State Resistance R DS(on) ( Ω ) –3.0 Static Drain to Source on State Resistance vs. Drain Current 1 Pulse Test 0.5 0.2 0.1 VGS = –4 V –10 V 0.05 0.02 0.01 –1 0 –2 –5 –10 –20 –50 –100 Drain Current I D (A) Static Drain to Source on State Resistance R DS(on) ( Ω) Forward Transfer Admittance |y fs | (S) Static Drain to Source on State Resistance vs. Temperature 0.30 Pulse Test 0.25 0.20 0.15 0.10 0.05 –10 V 0 –40 0 40 80 120 160 Case Temperature Tc (°C) VGS = –4 V –5, –10, –20 A I D = –20 A –5, –10 A Forward Transfer Admittance vs. Drain Current 100 30 Tc = –25 °C 10 3 75 °C 1 0.3 25 °C 0.1 –0.1 –0.3 –1 –3 –10 –30 Drain Current I D (A) V DS = –10 V Pulse Test –100 4 2SJ531 Body–Drain Diode Reverse Recovery Time 100 Reverse Recovery Time trr (ns) 10000 3000 Typical Capacitance vs. Drain to Source Voltage VGS = 0 f = 1 MHz Ciss 50 Capacitance C (pF) 1000 300 100 30 10 0 –10 –20 –30 –40 –50 Drain to Source Voltage V DS (V) Coss 20 di / dt = 50 A / µs V GS = 0, Ta = 25 °C –2 –5 –10 –20 I DR (A) Crss 10 –0.1 –0.2 –0.5 –1 Reverse Drain Current Dynamic Input Characteristics V DS (V) V GS (V) Switching Characteristics 0 1000 V GS = –10 V, V DD = –30 V 500 PW = 5 µs, duty < 1 % Switching Time t (ns) 0 V DD = –10 V –25 V –50 V –20 –4 t d(off) 200 tf 100 50 tr t d(on) Drain to Source Voltage –40 V DS V DD = –50 V –25 V –10 V I D = –18 A 16 32 Gate Charge V GS –8 –60 –12 –80 –16 –20 80 Gate to Source Voltage 20 10 –0.1 –0.2 –0.5 –1 –100 0 48 64 Qg (nc) –2 –5 –10 –20 I D (A) Drain Current 5 2SJ531 Reverse Drain Current vs. Source to Drain Voltage –10 V –16 –5 V V GS = 0, 5 V Maximum Avalanche Energy vs. Channel Temperature Derating –20 Repetitive Avalanche Energy EAR (mJ) 50 I AP = –18 A V DD = –25 V duty < 0.1 % Rg > 50 Ω Reverse Drain Current I DR (A) 40 –12 30 –8 20 –4 Pulse Test 0 –0.4 –0.8 –1.2 –1.6 –2.0 Source to Drain Voltage V SD (V) 10 0 25 50 75 100 125 150 Channel Temperature Tch (°C) Aval.


2SJ530S 2SJ531 2SJ532


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)