2SJ540

2SJ540 Silicon P Channel MOS FET High Speed Power Switching ADE-208-642A (Z) 2nd. Edition Jun 1998 Features Low on-resistance R DS(on) = 0.11 Ω typ. Low drive current 4 V gete drive devices High speed switching Outline TO–220AB D G 1 2 S 3 1. Gate 2. Drain (Flange) 3. Source 2SJ540 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings –60 ±20 –12 –48 –12 Unit V V A A A A mJ W °C °C Body-drain diode reverse drain current I DR Avalenche current Avalenche energy Channel dissipation Channel temperature Storage temperature Note: I AP Note3 Note3 Note2 –12 12 50 150 –55 to +150 EAR Pch Tch Tstg 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Tc = 25° C 3. Value at Tch = 25° C, Rg ≥ 50 Ω Electrical Characteristics (Ta = 25°C) Item Symbol Min –60 ±20 — — –1.0 — — 5 — — — — — — — — — Typ — — — — — 0.11 0.16 8 580 300 85 10 55 85 60 –1.2 60 Max — — –10 ±10 –2.0 0.15 0.23 — — — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns I F = –12A, VGS = 0 I F = –12A, VGS = 0 diF/ dt = 50A/ µs Test Conditions I D = –10mA, VGS = 0 I G = ±100µA, VDS = 0 VDS = –60 V, VGS = 0 VGS = ±16V, VDS = 0 I D = –1mA, VDS = –10V I D = –6A, VGS = –10V I D = –6A, VGS = –4V Note4 Note4 Note4 Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage V(BR)GSS Zero gate voltege drain current Gate to source leak current Gate to source cutoff voltage Static...