2SJ547

2SJ547 Silicon P Channel MOS FET High Speed Power Switching ADE-208-658A (Z) 2nd. Edition Jun 1998 Features Low on-resistance R DS(on) = 0.16 Ω typ. 4 V gete drive devices High speed switching Outline TO–220FM D G 1 2 S 1. Gate 2. Drain 3. Source 3 2SJ547 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings –60 ±20 –10 –40 –10 Unit V V A A A A mJ W °C °C Body-drain diode reverse drain current I DR Avalenche current Avalenche energy Channel dissipation Channel temperature Storage temperature Note: I AP Note3 Note3 Note2 –10 8.5 20 150 –55 to +150 EAR Pch Tch Tstg 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Tc = 25° C 3. Value at Tch = 25° C, Rg ≥ 50 Ω Electrical Characteristics (Ta = 25°C) Item Symbol Min –60 ±20 — — –1.0 — — 3.5 — — — — — — — — — Typ — — — — — 0.16 0.23 5.5 400 220 75 10 45 65 50 –1.2 70 Max — — –10 ±10 –2.0 0.21 0.36 — — — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns I F = –10A, VGS = 0 I F = –10A, VGS = 0 diF/ dt = 50A/ µs Test Conditions I D = –10mA, VGS = 0 I G = ±100µA, VDS = 0 VDS = –60 V, VGS = 0 VGS = ±16V, VDS = 0 I D = –1mA, VDS = –10V I D = –5A, VGS = –10V I D = –5A, VGS = –4V Note4 Note4 Note4 Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage V(BR)GSS Zero gate voltege drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state...