2SJ549

2SJ549(L),2SJ549(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-644A (Z) 2nd. Edition Jun 1998 Features Low on-resistance R DS(on) = 0.11 Ω typ. Low drive current 4 V gete drive devices High speed switching Outline LDPAK 4 4 D 1 1 2 3 G 2 3 1. Gate 2. Drain 3. Source 4. Drain S 2SJ549(L),2SJ549(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings –60 ±20 –12 –48 –12 Unit V V A A A A mJ W °C °C Body-drain diode reverse drain current I DR Avalenche current Avalenche energy Channel dissipation Channel temperature Storage temperature Note: I AP Note3 Note3 Note2 –12 12 50 150 –55 to +150 EAR Pch Tch Tstg 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Tc = 25° C 3. Value at Tch = 25° C, Rg ≥ 50 Ω Electrical Characteristics (Ta = 25°C) Item Symbol Min –60 ±20 — — –1.0 — — 5 — — — — — — — — — Typ — — — — — 0.11 0.16 8 580 300 85 10 55 85 60 –1.2 60 Max — — –10 ±10 –2.0 0.15 0.23 — — — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns I D = –12A, VGS = 0 I F = –12A, VGS = 0 diF/ dt = 50A/ µs Test Conditions I D = –10mA, VGS = 0 I G = ±100µA, VDS = 0 VDS = –60 V, VGS = 0 VGS = ±16V, VDS = 0 I D = –1mA, VDS = –10V I D = –6A, VGS = –10V I D = –6A, VGS = –4V Note4 Note4 Note4 Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage V(BR)GSS Zero gate voltege drain current Gate to source leak current G...