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2SJ550 Dataheets PDF



Part Number 2SJ550
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description Silicon P-Channel MOSFET
Datasheet 2SJ550 Datasheet2SJ550 Datasheet (PDF)

2SJ550(L),2SJ550(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-633A (Z) 2nd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.075 Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline LDPAK 4 4 D 1 1 2 3 G 2 3 1. Gate 2. Drain 3. Source 4. Drain S 2SJ550(L),2SJ550(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ra.

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2SJ550(L),2SJ550(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-633A (Z) 2nd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.075 Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline LDPAK 4 4 D 1 1 2 3 G 2 3 1. Gate 2. Drain 3. Source 4. Drain S 2SJ550(L),2SJ550(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings –60 ±20 –15 –60 –15 Unit V V A A A A mJ W °C °C Body-drain diode reverse drain current I DR Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: I AP Note3 Note3 Note2 –15 19 50 150 –55 to +150 EAR Pch Tch Tstg 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Tc = 25° C 3. Value at Tch = 25° C, Rg ≥ 50 Ω Electrical Characteristics (Ta = 25°C) Item Symbol Min –60 ±20 — — –1.0 — — 6.5 — — — — — — — — — Typ — — — — — 0.075 0.105 11 850 420 110 12 75 125 75 –1.1 70 Max — — –10 ±10 –2.0 0.095 0.155 — — — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns I F = –15A, VGS = 0 I F = –15A, VGS = 0 diF/ dt =50A/µs Test Conditions I D = –10mA, VGS = 0 I G = ±100µA, VDS = 0 VDS = –60 V, VGS = 0 VGS = ±16V, VDS = 0 I D = –1mA, VDS = –10V I D = –8A, VGS = –10V Note4 I D = –8A, VGS = –4V Note4 I D = –8A, VDS = –10V Note4 VDS = –10V VGS = 0 f = 1MHz VGS = –10V, I D = –8A RL = 3.75 Ω Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage V(BR)GSS Zero gate voltege drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time I DSS I GSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf Body–drain diode forward voltage VDF Body–drain diode reverse recovery time Note: 4. Pulse test t rr 2 2SJ550(L),2SJ550(S) Main Characteristics Power vs. Temperature Derating 80 1000 Maximum Safe Operation Area 300 100 30 10 3 1 0.3 DC Pch (W) 60 I D (A) 10 µs PW Op Channel Dissipation 10 = at Drain Current 1 10 ion 40 m 0µ s er m (T s ho t) ) s( 1s 20 Operation in this area is limited by R DS(on) c= 25 °C 0 50 100 150 Tc (°C) 200 Case Temperature Ta = 25 °C 0.1 3 30 0.1 0.3 1 10 100 Drain to Source Voltage V DS (V) Typical Output Characteristics –20 –10 V –6 V –4 V –20 Pulse Test –3.5 V Typical Transfer Characteristics V DS = –10 V I D (A) –12 ID Drain Current (A) –16 –16 –12 Drain Current –8 –3 V –4 VGS = –2.5 V 0 –2 –4 –6 –8 V DS (V) –10 –8 Tc = 75°C –4 25°C –25°C –1 –2 –3 –4 V GS (V) –5 0 Drain to Source Voltage Gate to Source Voltage 3 2SJ550(L),2SJ550(S) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current 10 3 1 0.3 0.1 VGS = –4 V –10 V –3.2 –2.4 –1.6 I D =.


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