2SJ551(L),2SJ551(S)
Silicon P Channel MOS FET High Speed Power Switching
ADE-208-647B (Z) 3rd. Edition Jun 1998 Features
Low on-resistance R DS(on) = 0.050 Ω typ. Low drive current. 4V gate drive devices. High speed switching.
Outline
LDPAK
4 4
D 1 1
2
3
G
2
3
1. Gate 2. Drain 3. Source 4. Drain
S
2SJ551(L),2SJ551(S)
Absolute Maximum Ratin...
