2SJ552

2SJ552(L),2SJ552(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-651B (Z) 3rd. Edition Jun 1998 Features Low on-resistance R DS(on) = 0.042 Ω typ. Low drive current. 4V gate drive devices. High speed switching. Outline LDPAK 4 D 1 G 1 4 2 3 2 3 1. Gate 2. Drain 3. Source 4. Drain S 2SJ552(L),2SJ552(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings –60 ±20 –20 –80 –20 Unit V V A A A A mJ W °C °C Body-drain diode reverse drain current I DR Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: I AP Note3 Note3 Note2 –20 34 75 150 –55 to +150 EAR Pch Tch Tstg 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Tc = 25° C 3. Value at Tch = 25° C, Rg ≥ 50 Ω Electrical Characteristics (Ta = 25°C) Item Symbol Min –60 ±20 — — –1.0 — — 10 — — — — — — — — — Typ — — — — — 0.042 0.065 16 1750 800 180 16 100 230 140 –1.0 100 Max — — –10 ±10 –2.0 0.055 0.095 — — — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns I F = –20A, VGS = 0 I F = –20A, VGS = 0 diF/ dt =50A/µs Test Conditions I D = –10mA, VGS = 0 I G = ±100µA, VDS = 0 VDS = –60 V, VGS = 0 VGS = ±16V, VDS = 0 I D = –1mA, VDS = –10V I D = –10A, VGS = –10V Note4 I D = –10A, VGS = –4V Note4 I D = –10A, VDS = –10V Note4 VDS = –10V VGS = 0 f = 1MHz VGS = –10V, I D = –10A RL = 3Ω Drain to source breakdown voltage V(BR)DSS Gate to ...