2SJ559

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ559 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION The 2SJ559 is a switching device which can be driven directly by a 2.5 V power source. The 2SJ559 has excellent switching characteristics, and is suitable for use as a high-speed switching device in digital circuits. PACKAGE DRAWING (Unit : mm) 0.3 ± 0.05 0.1 +0.1 –0.05 1.6 ± 0.1 0.8 ± 0.1 D 0 to 0.1 G 0.2 +0.1 –0 0.5 0.5 0.6 0.75 ± 0.05 S FEATURES Can be driven by a 2.5 V power source. Low gate cut-off voltage. 1.0 1.6 ± 0.1 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse) Note1 Note2 VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg –30 V V A A mW °C °C EQUIVALENT CIRCUIT Drain # 20 # 0.1 # 0.4 200 150 –55 to +150 Total Power Dissipation Channel Temperature Storage Temperature Gate Gate Protect Diode Source Internal Diode Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 % 2 2. Mounted on ceramic substrate of 3.0cm Remark × 0.64 mm Marking : C1 The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available i...