2SJ574

2SJ574 Silicon P Channel MOS FET High Speed Switching ADE-208-739B (Z) 3rd.Edition. June 1999 Features Low on-resistance R DS = 1.1 Ω typ. (VGS = -10 V , I D = -150 mA) R DS = 2.2 Ω typ. (VGS = -4 V , I D = -150 mA) 4 V gate drive device. Small package (MPAK) Outline MPAK 3 1 D 3 2 2 G 1. Source 2. Gate 3. Drain S 1 2SJ574 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg Note 2 Note1 Ratings -30 ±20 -300 -1.2 -300 400 150 –55 to +150 Unit V V mA A mA mW °C °C 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value on the alumina ceramic board (12.5x20x0.7mm) Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltege drain current Symbol V(BR)DSS V(BR)GSS I GSS I DSS Min -30 ±20 — — -1.3 — — 195 — — — — — — — Typ — — — — — 1.1 2.2 300 50 40 15 20 50 110 105 Max — — ±5 -1 -2.3 1.3 3.1 — — — — — — — — Unit V V µA µA V Ω Ω mS pF pF pF ns ns ns ns Test Conditions I D = -100 µA, VGS = 0 I G = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = -30 V, VGS = 0 I D = -10µA, VDS = -5 V ID = -150 mA,VGS = -10 V Note 3 Gate to source cutoff voltage VGS(off) Static drain to source on state RDS(on) resistance Forward transfer admittance Input capacitance Output capacitance RDS...