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2SJ576 Dataheets PDF



Part Number 2SJ576
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description Silicon P Channel MOS FET High Speed Switching
Datasheet 2SJ576 Datasheet2SJ576 Datasheet (PDF)

2SJ576 Silicon P Channel MOS FET High Speed Switching ADE-208-741B (Z) 3rd.Edition. June 1999 Features • Low on-resistance R DS =2.8 Ω typ. (V GS = -10 V , I D = -50 mA) R DS =5.7 Ω typ. (V GS = -4 V , ID = -50 mA) • 4 V gate drive device. • Small package (CMPAK) Outline CMPAK 3 1 2 D 3 2 G 1. Source 2. Gate 3. Drain S 1 2SJ576 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Ch.

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2SJ576 Silicon P Channel MOS FET High Speed Switching ADE-208-741B (Z) 3rd.Edition. June 1999 Features • Low on-resistance R DS =2.8 Ω typ. (V GS = -10 V , I D = -50 mA) R DS =5.7 Ω typ. (V GS = -4 V , ID = -50 mA) • 4 V gate drive device. • Small package (CMPAK) Outline CMPAK 3 1 2 D 3 2 G 1. Source 2. Gate 3. Drain S 1 2SJ576 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg Note 2 Note1 Ratings -30 ±20 -100 -400 -100 300 150 –55 to +150 Unit V V mA mA mA mW °C °C 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value on the alumina ceramic board (12.5x20x0.7 mm) Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltege drain current Symbol V(BR)DSS V(BR)GSS I GSS I DSS Min -30 ±20 — — -1.3 — — 68 — — — — — — — Typ — — — — — 2.8 5.7 105 25 20 8 10 15 40 45 Max — — ±5 -1 -2.3 3.3 7.9 — — — — — — — — Unit V V µA µA V Ω Ω mS pF pF pF ns ns ns ns Test Conditions I D = -100 µA, VGS = 0 I G = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = -30 V, VGS = 0 I D = -10µA, VDS = -5 V ID = -50 mA,VGS = -10 V Note 3 ID = -50 mA,VGS = -4 V Note 3 ID = -50 mA, V DS = -10 V Note 3 Gate to source cutoff voltage VGS(off) Static drain to source on state RDS(on) resistance Forward transfer admittance Input capacitance Output capacitance RDS(on) |yfs| Ciss Coss VDS = -10 V VGS = 0 f = 1 MHz I D = -50 mA, VGS = -10 V RL = 200Ω Reverse transfer capacitance Crss Turn-on delay time Rise time Turn-off delay time Fall time Note: t d(on) tr t d(off) tf 3. Pulse test 4. Marking is AP See characteristics curves of 2SJ575 2 2SJ576 Main Characteristics Maximum Safe Operation Area -5 -2 -1.0 -0.5 -0.2 -0.1 -0.05 -0.02 -0.01 -0.005 -0.002 -0.001 Power vs. temperature Derating 400 *Pch (mW) 300 I D (A) 10 µs 100 µs 1 ms DC Operation in this area is limited by RDS(on) Channel Dissipation 200 Drain Current Op = (1 10 m sh s ot er ) at ion PW 100 Ta=25 °C -5 -10 -20 -50 0 50 100 150 Ta ( °C) 200 -0.0005 -0.05 -0.1 -0.2 -0.5 -1.0 -2 Ambient Temperature Drain to Source Voltage VDS (V) *Value on the alumina ceramic board.(12.5x20x0.7mm) Value on the alumina ceramic board.(12.5x20x0.7mm) 3 2SJ576 Package Dimensions Unit: mm 0.425 0.3 + 0.10 – 0.05 0.16 – 0.06 + 0.10 0.1 1.25 + – 0.1 + 0.3 – 0.3 0 ~ 0.1 0.65 0.65 1.3 2.0 + 0.2 – 0.2 + 0.2 – 0.2 0.1 0.3 + – 0.0.5 0.2 + 0.1 0.9– 0.1 0.425 0.3– 0.05 + 0.1 2.1 Hitachi Code EIAJ JEDEC CMPAK SC–70 – 4 2SJ576 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/.


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