Document
Ordering number : ENN7148
2SJ589LS
P-Channel Silicon MOSFET
2SJ589LS
DC / DC Converter Applications
Features
• •
Package Dimensions
unit : mm 2078C
[2SJ589LS]
10.0 3.2 4.5 2.8
Low ON-resistance. 4V drive.
3.5 7.2 16.1 16.0
3.6
0.9
1.2
1.2
0.75 1 2 3
14.0
0.7
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Tc=25°C Conditions 2.55 2.55
1 : Gate 2 : Drain 3 : Source SANYO : TO-220FI(LS)
Ratings -60 ±20 -15 -60 2.0 25 150 --55 to +150 Unit V V A A W W °C °C
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Conditions ID=--1mA, VGS=0 VDS=-60V, VGS=0 VGS=±16V, VDS=0 VDS=-10V, ID=--1mA VDS=-10V, ID=--8A ID=--8A, VGS=-10V ID=--8A, VGS=-4V Ratings min --60 --10 ±10 -1.0 10 14 58 80 80 115 --2.4 typ max Unit V µA µA V S mΩ mΩ
2.4
0.6
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
11502 TS IM TA-3294 No.7148-1/4
2SJ589LS
Continued from preceding page.
Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=--20V, f=1MHz VDS=--20V, f=1MHz VDS=--20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=--10V, VGS=--10V, ID=-15A VDS=--10V, VGS=--10V, ID=-15A VDS=--10V, VGS=--10V, ID=-15A IS=--15A, VGS=0 Ratings min typ 1300 300 90 15 70 140 72 40 5 10 --0.91 --1.2 max Unit pF pF pF ns ns ns ns nC nC nC V
Switching Time Test Circuit
VDD= --30V VIN 0V --10V VIN PW=10µs D.C.≤1% ID= --8A RL=3.75Ω
D
VOUT
G
P.G
50Ω
2SJ589LS
S
--16
ID -- VDS
.0V
--30
ID -- VGS
--25° Tc=
0 --0.5 --1.0 --1.5 --2.0 --2.5
0V
--14 --12 --10 --8 --6 --4 --2 0 0 --0.2 --0.4
--8 .
Drain Current, ID -- A
.0V
Drain Current, ID -- A
--1 0
--6
--20
--3.5V
--15
--10
VGS= --2.5V
0 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0
Tc
=7
--5
5° C 25 -°C 25° C
--3.0V
--3.0
--3.5
--4.0
--4.5
25° C
--5.0 IT04148 120 140 IT04150
Drain-to-Source Voltage, VDS -- V
140
.0V
--4.0V
--25
IT04147
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
140
RDS(on) -- Tc
Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ
120
Tc=25°C ID= --8A
120
100
100
80
80
-I D=
-I D=
8A
--4V S= G V ,
0V
60
60
= --1 VGS 8A,
40
40
20 0 0 --2 --4 --6 --8 --10 --12 --14 --16 --18 --20
20 0 --60
--40
--20
0
20
40
60
80
100
Gate-to-Source Voltage, VGS -- V
IT04149
Case Temperature, Tc -- °C
No.7148-2/4
75°
--5
C
VDS= --10V
C
2SJ589LS
Forward Transfer Admittance, yfs -- S
100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 --0.0012 3 5 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7--10 2 3 5 7 --100 IT04151 Drain Current, ID -- A 5 3
yfs -- ID
VDS= --10V
Forward Current, IF -- A
Tc=
°C --25 C C 75° 25°
--100 7 5 3 2 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 --0.4
IF -- VSD
VGS=0
Tc= 75°
C 25°C
--0.6
--0.01 --0.2
--25° C
--0.8
--1.0
--1.2 IT04152
SW Time -- ID
Diode Forward Voltage, VSD -- V
10000 7 5 3 2
Ciss, Coss, Crss -- VDS
f=1MHz
VDD= --30V VGS= --10V
td(off)
Switching Time, SW Time -- ns
2
Ciss, Coss, Crss -- pF
Ciss
100 7 5 3 2
tf
1000 7 5 3 2 100 7 5 3 2 10
Coss
Crss
tr
td(on)
2 3 5 7 --1.0 2 3 5 7 --10 2 3
10 --0.1
0
--10
--20
--30
--40
--50
--60 IT04154
Drain Current, ID -- A
--10 --9
IT04153 --100 7 5 3 2
VGS -- Qg
Drain-to-Source Voltage, VDS -- V
ASO
Gate-to-Source Voltage, VGS -- V
VDS= --10V ID= --15A
IDP= --60A
≤10µs
--8 --7 --6 --5 --4 --3 --2.