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2SJ589LS Dataheets PDF



Part Number 2SJ589LS
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description DC / DC Converter Applications
Datasheet 2SJ589LS Datasheet2SJ589LS Datasheet (PDF)

Ordering number : ENN7148 2SJ589LS P-Channel Silicon MOSFET 2SJ589LS DC / DC Converter Applications Features • • Package Dimensions unit : mm 2078C [2SJ589LS] 10.0 3.2 4.5 2.8 Low ON-resistance. 4V drive. 3.5 7.2 16.1 16.0 3.6 0.9 1.2 1.2 0.75 1 2 3 14.0 0.7 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS.

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Ordering number : ENN7148 2SJ589LS P-Channel Silicon MOSFET 2SJ589LS DC / DC Converter Applications Features • • Package Dimensions unit : mm 2078C [2SJ589LS] 10.0 3.2 4.5 2.8 Low ON-resistance. 4V drive. 3.5 7.2 16.1 16.0 3.6 0.9 1.2 1.2 0.75 1 2 3 14.0 0.7 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Tc=25°C Conditions 2.55 2.55 1 : Gate 2 : Drain 3 : Source SANYO : TO-220FI(LS) Ratings -60 ±20 -15 -60 2.0 25 150 --55 to +150 Unit V V A A W W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Conditions ID=--1mA, VGS=0 VDS=-60V, VGS=0 VGS=±16V, VDS=0 VDS=-10V, ID=--1mA VDS=-10V, ID=--8A ID=--8A, VGS=-10V ID=--8A, VGS=-4V Ratings min --60 --10 ±10 -1.0 10 14 58 80 80 115 --2.4 typ max Unit V µA µA V S mΩ mΩ 2.4 0.6 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 11502 TS IM TA-3294 No.7148-1/4 2SJ589LS Continued from preceding page. Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=--20V, f=1MHz VDS=--20V, f=1MHz VDS=--20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=--10V, VGS=--10V, ID=-15A VDS=--10V, VGS=--10V, ID=-15A VDS=--10V, VGS=--10V, ID=-15A IS=--15A, VGS=0 Ratings min typ 1300 300 90 15 70 140 72 40 5 10 --0.91 --1.2 max Unit pF pF pF ns ns ns ns nC nC nC V Switching Time Test Circuit VDD= --30V VIN 0V --10V VIN PW=10µs D.C.≤1% ID= --8A RL=3.75Ω D VOUT G P.G 50Ω 2SJ589LS S --16 ID -- VDS .0V --30 ID -- VGS --25° Tc= 0 --0.5 --1.0 --1.5 --2.0 --2.5 0V --14 --12 --10 --8 --6 --4 --2 0 0 --0.2 --0.4 --8 . Drain Current, ID -- A .0V Drain Current, ID -- A --1 0 --6 --20 --3.5V --15 --10 VGS= --2.5V 0 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0 Tc =7 --5 5° C 25 -°C 25° C --3.0V --3.0 --3.5 --4.0 --4.5 25° C --5.0 IT04148 120 140 IT04150 Drain-to-Source Voltage, VDS -- V 140 .0V --4.0V --25 IT04147 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V 140 RDS(on) -- Tc Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 120 Tc=25°C ID= --8A 120 100 100 80 80 -I D= -I D= 8A --4V S= G V , 0V 60 60 = --1 VGS 8A, 40 40 20 0 0 --2 --4 --6 --8 --10 --12 --14 --16 --18 --20 20 0 --60 --40 --20 0 20 40 60 80 100 Gate-to-Source Voltage, VGS -- V IT04149 Case Temperature, Tc -- °C No.7148-2/4 75° --5 C VDS= --10V C 2SJ589LS Forward Transfer Admittance, yfs -- S 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 --0.0012 3 5 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7--10 2 3 5 7 --100 IT04151 Drain Current, ID -- A 5 3 yfs -- ID VDS= --10V Forward Current, IF -- A Tc= °C --25 C C 75° 25° --100 7 5 3 2 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 --0.4 IF -- VSD VGS=0 Tc= 75° C 25°C --0.6 --0.01 --0.2 --25° C --0.8 --1.0 --1.2 IT04152 SW Time -- ID Diode Forward Voltage, VSD -- V 10000 7 5 3 2 Ciss, Coss, Crss -- VDS f=1MHz VDD= --30V VGS= --10V td(off) Switching Time, SW Time -- ns 2 Ciss, Coss, Crss -- pF Ciss 100 7 5 3 2 tf 1000 7 5 3 2 100 7 5 3 2 10 Coss Crss tr td(on) 2 3 5 7 --1.0 2 3 5 7 --10 2 3 10 --0.1 0 --10 --20 --30 --40 --50 --60 IT04154 Drain Current, ID -- A --10 --9 IT04153 --100 7 5 3 2 VGS -- Qg Drain-to-Source Voltage, VDS -- V ASO Gate-to-Source Voltage, VGS -- V VDS= --10V ID= --15A IDP= --60A ≤10µs --8 --7 --6 --5 --4 --3 --2.


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