DatasheetsPDF.com

2SJ597 Dataheets PDF



Part Number 2SJ597
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description DC / DC Converter Applications
Datasheet 2SJ597 Datasheet2SJ597 Datasheet (PDF)

Ordering number : ENN6670 2SJ597 P-Channel Silicon MOSFET 2SJ597 DC / DC Converter Applications Features • • • Package Dimensions unit : mm 2083B [2SJ597] 6.5 5.0 4 1.5 2.3 0.5 Low ON-resistance. Ultrahigh-speed switching. 4V drive. 0.85 0.7 0.8 1.6 1.2 7.5 0.5 0.6 5.5 7.0 1 2 3 1 : Gate 2 : Drain 3 : Source 4 : Drain 2.3 2.3 SANYO : TP unit : mm 2092B [2SJ597] 6.5 5.0 4 2.3 1.5 0.5 5.5 7.0 0.85 0.5 1 0.6 0.8 2 3 2.5 1.2 1.2 0 to 0.2 1 : Gate 2 : Drain 3 : Source 4.

  2SJ597   2SJ597



Document
Ordering number : ENN6670 2SJ597 P-Channel Silicon MOSFET 2SJ597 DC / DC Converter Applications Features • • • Package Dimensions unit : mm 2083B [2SJ597] 6.5 5.0 4 1.5 2.3 0.5 Low ON-resistance. Ultrahigh-speed switching. 4V drive. 0.85 0.7 0.8 1.6 1.2 7.5 0.5 0.6 5.5 7.0 1 2 3 1 : Gate 2 : Drain 3 : Source 4 : Drain 2.3 2.3 SANYO : TP unit : mm 2092B [2SJ597] 6.5 5.0 4 2.3 1.5 0.5 5.5 7.0 0.85 0.5 1 0.6 0.8 2 3 2.5 1.2 1.2 0 to 0.2 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP-FA 2.3 2.3 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 82200 TS IM TA-2801 No.6670-1/4 2SJ597 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Tc=25°C Conditions Ratings --60 ± 20 --4 --16 1 15 150 --55 to +150 Unit V V A A W W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Sourse Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Sourse On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions ID=--1mA, VGS=0 VDS=--60V, VGS=0 VGS=± 16V, VDS=0 VDS=--10V, ID=--1mA VDS=--10V, ID=-2A ID=--2A, VGS=--10V ID=--1A, VGS=-4V VDS=--20V, f=1MHz VDS=--20V, f=1MHz VDS=--20V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=--10V, VGS=--10V, ID=-4A VDS=--10V, VGS=--10V, ID=-4A VDS=--10V, VGS=--10V, ID=-4A IS=--4A, VGS=0 --1.0 2.3 3.2 300 400 270 70 20 8 11 28 13 9.8 1.4 1.7 --0.92 --1.2 400 560 Ratings min --60 --10 ± 10 --2.4 typ max Unit V µA µA V S mΩ mΩ pF pF pF ns ns ns ns nC nC nC V Switching Time Test Circuit VIN 0V --10V VIN PW=10µs D.C.≤1% VDD= --30V ID= --2A RL=15Ω D VOUT G P.G 50Ω 2SJ597 S --4.5 --4.0 ID -- VDS V 0.0 . --4 0V Drain Current, ID -- A --8 ID -- VGS VDS= --10V =-25 °C Tc --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --7 --6 --5 --4 --3 --2 --1 0 --1.0 --1 0V --8 .0V Drain Current, ID -- A -- --2.5 --2.0 --1.5 --1.0 --0.5 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0 --3.0V VGS= --2.5V 75 °C --4.5 --3.0 --6 . --3.5V 25 --5.0 IT02077 --3.5 0 5. V Drain-to-Source-Voltage, VDS -- V IT02076 Gate-to-Source Voltage, VGS -- V No.6670-2/4 °C 2SJ597 1000 RDS(on) -- VGS Tc=25°C 800 RDS(on) -- Tc Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 900 800 700 600 500 400 300 200 100 0 0 --2 --4 --6 --8 --10 --12 --14 --16 --18 --20 700 600 500 400 300 200 100 0 --60 --1A ID= --2A --4V S= G V , 10V --1A = -I D= S VG , --2A I D= --40 --20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 --0.001 2 3 yfs -- ID IT02078 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 Case Temperature Tc -- °C IT02079 IF -- VSD VGS= 0 Forward Transfer Admittance, yfs -- S VDS= --10V Foward Current, IF -- A 75° C 25°C = Tc 5 --2 °C 75 25 °C 5 7--0.1 2 3 5 7--1.0 2 3 5 7 --10 IT02080 5 7 --0.01 2 3 --0.01 --0.4 --0.6 Tc= °C --25° C --0.8 --1.0 --1.2 IT02081 1000 7 5 Ciss, Coss, Crss -- VDS f=1MHz Drain Current, ID -- A Diode Forward Voltage, VSD -- V --10 --9 VGS -- Qg Gate-to-Source Voltage, VGS -- V VDS= --10V ID= --4A --8 --7 --6 --5 --4 --3 --2 --1 0 Ciss, Coss, Crss -- pF 3 2 Ciss 100 7 5 3 2 Coss Crss 0 --10 --20 --30 --40 --50 --60 IT01230 10 0 1 2 3 4 5 6 7 8 9 10 Drain-to-Source Voltage, VDS -- V 100 7 SW Time -- ID Drain Current, ID -- A --100 7 5 3 2 IT02083 ASO Switching Time, SW Time -- ns 5 VDD= --30V VGS= --10V td(off) Drain Current,.


2SJ596 2SJ597 2SJ609


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)