2SJ619

2SJ619 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-π-MOSV) 2SJ619 Switching Regulator and DC-DC Converter Applications Motor Drive Applications Unit: mm 4-V gate drive Low drain-source ON resistance: RDS (ON) = 0.15 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.7 S (typ.) Low leakage current: IDSS = −100 µA (max) (VDS = −100 V) Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg −100 V −100 V ±20 V −16 A −64 75 W 292 mJ −16 A 7.5 mJ 150 °C −55 to150 °C JEDEC ― JEITA ― TOSHIBA 2-9F1C Weight: 0.74 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Conce...